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作者(中文):王柏凱
作者(外文):Wang, Po-Kai
論文名稱(中文):設計與研製低操作電壓之平面式矽微燈絲光源及陣列
論文名稱(外文):Design and Fabrication of Silicon Planar Micro Filament and Array with Low Operating Voltages
指導教授(中文):吳孟奇
指導教授(外文):Wu, Meng-Chyi
口試委員(中文):翁炳國
羅俊傑
盧峙丞
學位類別:碩士
校院名稱:國立清華大學
系所名稱:電子工程研究所
學號:105063506
出版年(民國):107
畢業學年度:106
語文別:英文
論文頁數:60
中文關鍵詞:黑體輻射矽燈絲紅外光光譜學壽命熱電堆感應器
外文關鍵詞:blackbody radiationsilicon filamentinfrared spectoscopylifetimethermopile sensor
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近年來,紅外光波段的應用逐漸被人們所重視,像是有毒氣體的偵測避免工安意外的遺憾、未知化合物組成的檢測、可以用來快速分類塑膠種類,大大增加環保產業的效能、非侵入式血糖檢測等…,而特徵吸收紅外線光譜就像未知待測物的指紋般,每種不同的化學式組成擁有不同的特徵吸收波段。此外在我們的研究結果發現,掏空燈絲的電阻值會隨著環境的氣壓值大小所改變,這項結果顯示了我們的燈絲可以拿來做為真空計的使用。在紅外光波段的光源原件上,矽絲燈不需要複雜的磊晶技術,可以省下製作的成本,其發光波段相比於LED,能達到更廣的發光波段。
然而在去年實驗室學長的論文中顯指出,矽燈絲擁有著比鎢絲燈(金屬燈絲)來的長的操作壽命,因為SOI燈源的發光層是單晶的silicon比用RF sputter濺鍍的靶材金屬發光層更為緻密與可靠,因此其壽命是金屬燈絲(鎢)的30倍以上但矽燈絲在一大氣壓下的點亮電壓還是過高,希望可以藉由一連串的優化來降低其電壓值。
為了製作近紅外光發光光源,本研究方向採用在SOI基板上,經由後續半導體製程,包含利用Reactive-Ion Etching(RIE)蝕刻來定義我們元件的發光區、thermal coater來蒸鍍電極、Plasma Enhance Chemical Vapor Deposition (PECVD) 沉積包覆的絕緣層、氣體XeF2進行等向性掏空蝕刻矽基板來達到將鎢懸浮於基板,藉以絕熱來發光,來製作平面式微型化紅外光光源。
研究目標為提高微型燈絲的穩定性和操作壽命並作出低操作電壓與更大規格的陣列提高了商業化封裝的可行性。
Recently, the infrared red spectrum (NIR wavelength 700nm~2500nnm) has been widely using for normal life. Such as the poison gas detection can avoid the dander of the factory, material tests can help us to distinguish the unknown, the plastic detection can enhance the efficiency of the recycling, the non-invasive blood sugar tests etc…The spectrum of the infrared red is just like the fingerprints of compounds. Each of chemical bond has unique absorb wavelength band. In addition, our experiment shows that the emptied filament’s resistance is related to the environment pressure. It reveals that our filament can also be a gauge to detect the pressure value. Compared to LED lighting, incandescent does not rely on the complexed epitaxy technology, so it can save a lot of expense of production. The light emitting wavelength of incandescent is wider than LED lighting.
In last year research tells the silicon filament has longer operating times than meatal filament. It is because that the SOI wafer’s silicon is single crystal grow. This make silicon is more stable and dense than using RF sputter to sputtering the metal. It has 30 times operating time than meatal filament but the operating voltage is too high. To reduce the voltage, I will do lots of optimization and researching.
To make the IR filament, we will do a series of semiconductor production processes on Silicon On Insulator (SOI) wafer. Including using Reactive-Ion Etching(RIE) to define filament area, using thermal coater to define metal pad (cr/al/cr) area, using Plasma Enhance Chemical Vapor Deposition (PECVD) to grow SiO2 to be passivation layer, using Reactive-Ion Etching(RIE) to make emptied gas channel, and using XeF2 to do the isotropic etching and form the suspension structure.
My target is to reduce the operating voltage, enhance the stability and lifetime of the filament. Also make lager array of infrared red filament and give it a chance to commercialize production.
摘要 II
Abstract IV
致謝 VI
Content VIII
List of Figure IX
List of Table XII
Chapter 1 Introduction 1
1-1Near-infrared Light Spectrum Introduction 1
1-2Application 3
1-3 Motivation 6
Chapter2 Theoretical Basic 8
2-1 Black Body Radiation Law 8
2-2 The IV curve of filament 15
2-2 Fundamental principle of the design of experiment 16
2-3 The experimental design and flow 20
Chapter 3 Micro-Filament Experimental Procedure 21
3-1 Mask designing and device structure 21
3-2 Experiment process flow 26
3-2-1 Silicon Filament 26
3-2-2 2D larger Array Structure 30
3-3 Filament measurement system 31
Chapter 4 Experiment Result and Discussion 34
4-1 Find the key of decreasing operating voltage of filament 35
4-1-1 XeF2 suspension process 35
4-1-2 The scale down design 38
4-1-3 The highly doping wafer 40
4-2 Silicon infrared emitter with low Vop 43
4-2-1 I-V characteristic analysis and infrared spetrum 43
4-2-2 Lifetime of the silicon filament 47
4-2-3 Improve the Lifetime of the silicon micro-filament 51
4-3 Two dimensional of micro-Filament Array 53
4-4 The light power of the silicon micro-filament and array 55
4-5 The vacuum gauge 56
Chapter 5 Conclusion 57
Chapter 6 Reference . 59


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