本研究使用直流真空濺鍍系統成長CIG前驅層，再以固態硒源進行硒化製程，過程中可以藉由改變硒粉的量、升溫速率、溫度、持溫時間討論不同溫度曲線下CIGS薄膜的特性，接著調整溶液pH值來獲得最佳化的CdS緩衝層覆蓋在上方，接著將CdS薄膜與CdS/CIGS/Mo/Glass結構進行退火，改變不同的退火溫度:180、240、300℃，以XRD、拉曼光譜、穿透光譜與SEM分析，得到退火溫度300℃的CdS薄膜有最好的穿透率與強度，不過退火溫度300℃會對於CdS/CIGS接面產生負面的影響，造成短路電流下降。
我們以模擬軟體Complete EASE模擬a-si、CIGS、Perovskite三種元件的吸收係數曲線，發現吸收光譜曲線與元件光譜響應圖有相同的趨勢，接著運用Perovskite半透明結構與吸收光譜曲線的特性，結合a-si-H、CIGS元件形成疊層結構，得到Perovskite/ CIGS的疊層結構吸曲線優於Perovskite/ a-si的疊層結構，接著我們改變元件之間的透光層材料、吸收層能隙與厚度優化Perovskite/ CIGS疊層結構的吸收光譜曲線，最後以MO(800nm)/ CIGS(1500nm bandgap=1.5eV)/CdS(60nm)/PEDOT:PSS(50nm)/Perovskite(300nmbandgap=1.9 eV)/PCBM(100nm)疊層結構有著最接近光譜響應的吸收曲線結果。

In this study, a DC vacuum sputtering system was used to grow the CIG precursor layer, and then a solid-state selenium source was used for the selenization process. During the process, the CIGS film under different temperature curves could be discussed by changing the amount of selenium powder, heating rate, temperature and holding time. Characteristics, then adjust the pH of the solution to obtain an optimized CdS buffer layer overlying, and then anneal the CdS film to the CdS/CIGS/Mo/Glass structure to change the different annealing temperatures: 180, 240, 300 ° C, XRD, Raman spectroscopy, breakthrough spectroscopy and SEM analysis showed that the CdS film with an annealing temperature of 300 °C had the best penetration and strength, but the annealing temperature of 300 °C would have a negative impact on the CdS/CIGS junction,cause the short circuit current to drop.
We simulated the absorption coefficient curves of the three components a-si, CIGS and Perovskite with the simulation software Complete EASE. It was found that the absorption spectrum curve has the same trend as the spectral response diagram of the component, and then the characteristics of the Perovskite translucent structure and the absorption spectrum curve are combined with a-si-H and CIGS components form a tandem structure, and the tandem structure of Perovskite/CIGS is better than that of Perovskite/a-si. Then we change the absorption layer material and the absorption layer gap between the components. The absorption spectrum curve of the thickness-optimized Perovskite/CIGS tandem structure is finally MO (800 nm) / CIGS (1500 nm bandgap = 1.5 eV) / CdS (60 nm) / PEDOT: PSS (50 nm) / Perovskite (300 nm bandgap = 1.9 eV) / The PCBM (100 nm) stack structure has the absorption curve result closest to the spectral response.

摘 要 I
ABSTRACT II
致 謝 III
目 錄 IV
圖目錄 VIII
表目錄 XII
第一章 緒論 1
1.1 前言 1
1.2 太陽能電池 2
1.2.1 太陽能電池的種類介紹 2
1.2.2太陽能電池基本原理 3
1.2.3太陽能電池的等效電路 4
1.2.4光伏基本參數 7
1.2.5太陽光譜 8
1.2.6空氣質量(air mass) 9
1.2.7吸收係數Absorption Coefficient（α） 10
1.2.8 研究動機 11
第二章 太陽電池 12
2.1 CIGS太陽能電池 12
2.1.1CIGS太陽能電池介紹 12
2.1.2 CuInSe2薄膜性質 12
2.1.3 銅銦鎵硒化合物的性質 13
2.2 CIGS太陽能電池結構 14
2.2.1 CIGS太陽能電池結構 14
2.3 CIGS各層薄膜特性 15
2.3.1鈉基板 15
2.3.2 Mo背電極 15
2.3.3 CIGS吸收層 15
2.3.4 CdS緩衝層 16
2.3.5 i-ZnO本質透光層 16
2.3.6 AZO導電層 16
2.3.7 Al電極 16
第三章 實驗與實驗儀器 17
3.1實驗儀器 17
3.1.1射頻真空磁控濺鍍系統 17
3.1.2直流真空濺鍍系統 18
3.1.3硒化爐管 19
3.2元件製備流程 20
3.2.1 鈉玻璃基板清潔步驟 21
3.2.2濺鍍製程 21
3.2.3 Mo金屬背電極濺鍍 22
3.2.4CIG前驅層濺鍍 22
3.2.5 硒化製程 22
3.2.6 CdS緩衝層製備 23
3.2.7 熱退火製程 24
3.2.8 i-ZnO透光層/ AZO導電層/Al電極製備 24
3.3量測儀器 25
3.3.1四點探針 25
3.3.2 掃描式電子顯微鏡(SEM) 26
3.3.3 拉曼光譜儀(Raman) 27
3.3.4 XRD 27
3.3.5 紫外光-可見光吸收光譜儀 27
3.3.6 太陽光模擬器(solar simulator) 27
第四章 實驗結果與討論 28
4.1 Mo金屬背電極 28
4.2 CIG前驅層 32
4.3 硒化製程 33
4.3.1 硒粉量對於薄膜的影響 33
4.3.2 升溫速率與二次項形成之關係 34
4.3.3 兩階段式硒化峰值溫度對於結構的影響 36
4.3.4 兩階段式硒化峰值溫度XRD圖分析 39
4.4 CdS緩衝層 41
4.5 退火製程 44
4.5.1 退火製程對於CdS薄膜的影響 44
4.5.2 退火後CdS/CIGS結構拉曼光譜分析 49
4.6 i-ZnO本質透光層 53
4.7 AZO導電層 56
4.8 CIGS太陽能電池元件的結果討論 59
第五章 疊層太陽電池介紹與模擬結果討論 62
5.1薄膜太陽能電池介紹 62
5.2.1 氫化非晶矽薄膜太陽電池 62
5.2.2鈣鈦礦太陽能電池 63
5.2疊層結構介紹 64
5.3 材料的光譜響應 65
5.4 模擬軟體 65
5.5 材料的吸收係數 66
5.6 太陽能電池疊層結構 69
5.7 疊層結構透光層材料 71
5.8 能隙與厚度對於吸收係數的影響 73
第六章 結論 83
研究結論 83
參考文獻 85

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