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作者(中文):沈廷威
作者(外文):Shen, Ting-Wei
論文名稱(中文):設計與實現性能提升之CMOS-MEMS熱電式紅外線感測器
論文名稱(外文):Design and Implementation of Performance Enhancement CMOS-MEMS Thermoelectric Infrared Sensor
指導教授(中文):方維倫
指導教授(外文):Fang, Wei-Leun
口試委員(中文):李昇憲
孫志銘
口試委員(外文):Li, Sheng-Shian
Sun, Chih-Ming
學位類別:碩士
校院名稱:國立清華大學
系所名稱:奈米工程與微系統研究所
學號:105035506
出版年(民國):107
畢業學年度:106
語文別:中文
論文頁數:109
中文關鍵詞:CMOS-MEMS熱電式紅外線感測器熱電效應
外文關鍵詞:CMOS-MEMSthermoelectric infrared sensorthermopile
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本研究以台積電CMOS 標準製程: TSMC 0.18μm 1P6M 作為實現熱電式紅外線感測器的製程平台,主要研究方向為測試此製程中熱電材料、吸收層結構及膜層堆疊之設計,在相同面積下提升元件性能。材料測試方面設計Test key作為萃取熱電係數之研究方法,吸收層結構則是利用CMOS多層堆疊的特色,將特定的犧牲層利用金屬濕蝕刻移除後,形成傘狀吸收層結構,中央支撐柱與下方熱電堆之熱端連接。此吸收層結構主要能提升紅外線感測元件的吸收面積使用率,同時創造出較佳的熱傳導路徑,將吸收層所產生的熱經由支撐柱直接傳遞到熱電堆中央,有效增加熱端與冷端間的溫差。下方的熱電偶結構設計參照實驗室過去所開發的經驗,並以此概念設計一無吸收層結構之感測元件作為對照組,使其與具有吸收層結構之元件在尺寸及雜訊大小皆相同,以驗證設計是否成功被實現。研究過程中透過理論公式計算、ANSYS模擬軟體進行相關模擬,得到預期之響應度、雜訊等效功率及檢出比等規格。晶片經由後製程完成後,進行各項性能的量測,驗證所提出的設計概念成功被達成,完整實現CMOS MEMS熱電式紅外線感測器的研究。
This study presents the CMOS MEMS thermoelectric infrared sensor using TSMC 0.18μm 1P6M standard CMOS process. There are two major objectives. One of them is to test the thermoelectric material in this standard CMOS process by the test-key design, and the other one is to improve thermoelectric infrared sensor by geometry design without changing the footprint size. We design the umbrella-like heat transduction absorber which providing a better heat-flow path, and enhancing absorption area/efficiency of infrared to improve the thermoelectric infrared sensor by means of 1P6M multi-layer stacking. Thus, temperature difference between hot and cold junctions is increased, and the performance of IR sensor is significantly improved. The serpentine thermocouples below the absorber in the proposed design was implemented by our team, and this serpentine thermocouples without umbrella-like absorber which possessed the same sensing material, element size and noise level is regarded as the reference design in this study. Then, we use theoretical analysis and the ANSYS software to verify our design concept. After we completed the fabrication process, we measure the material property and the functions of thermoelectric infrared sensor. The result indicate that we can achieve our goal, and implement the research of CMOS MEMS thermoelectric infrared sensor.
中文摘要 I
Abstract II
致謝 III
圖目錄 VIII
表目錄 XIII
第一章 序論 1
1-1 前言 1
1-2 研究動機 3
1-3 文獻回顧 4
1-3-1 紅外線感測器分析與介紹 5
1-3-2 熱電式紅外線感測器 8
1-3-3 CMOS-MEMS製程技術 10
1- 4 研究目標與全文架構 12
第二章 紅外線感測原理分析 27
2-1 熱輻射理論分析與介紹 27
2-1-1 黑體輻射理論 27
2-1-2 熱輻射放射率 29
2-1-3 維恩位移定律 30
2-2 熱電效應 30
2-3 熱電優值分析 32
2-4 紅外線感測器規格參數 33
2-4-1 響應度(Responsivity) 33
2-4-2 雜訊等效功率(Noise equivalent power) 34
2-4-3 檢出比(Specific detectivity) 35
2-4-4 反應時間(Response time) 35
第三章 元件設計與分析 42
3-1 感測器之設計考量 43
3-2 設計概念 44
3-2-1 結構設計 44
3-2-2 吸收層設計 46
3-2-3 熱電材料 47
3-3 模擬驗證 48
第四章 製程流程與結果分析 58
4-1 元件製程流程 58
4-2 製作結果 59
4-3 製程問題與討論 61
第五章 元件量測與性能分析 70
5-1 材料參數量測與分析 70
5-2 感測器性能量測 71
5-2-1 溫度靈敏度量測 72
5-2-2 響應度量測 73
5-2-3 反應時間量測 75
5-2-4 吸收層量測分析 76
5-2-5 接收角與響應度量測 78
5-3 量測結果分析與討論 78
第六章 結論與未來工作 95
6-1 研究成果與結論 95
6-2 未來工作 96
參考文獻 103

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