碳化矽晶圓因具有優異的耐高電壓、耐熱以及低損耗等材料特性，是高功率電子元件所需關鍵晶圓材料，可應用於製作高階電源供應及控制等綠色電子元件。在環保意識日益高漲之際，能源有效利用率成為關注焦點，碳化矽材料正扮演關鍵角色。然而，碳化矽因其材料特性硬脆，因此表面加工十分困難，現階段加工製程需要通過研磨、硬拋光和化學機械拋光等一系列流程，才能產出合格的碳化矽晶圓。硬拋光作為研磨和化學機械拋光之間的工序，既要去除研磨造成的損傷層，又要保證碳化矽晶圓表面不能產生明顯的損傷層以便於化學機械拋光去除，有著非常重要的承接作用。本文研究將對不同加工參數於碳化矽晶圓硬拋光時表面品質的影響進行分析。此外，本研究將使用聲發射感測器來分析此製程，藉由蒐集不同拋光條件下聲發射訊號值與材料移除率的關聯性，建立碳化矽晶圓於硬拋光製程的移除率預測模型。

Since silicon carbide (SiC) has properties of high voltage withstanding, high hardness, high temperature resistance and so on, it can be widely used in the production of high power devices. However, SiC is very hard to process. It needs a series of steps which includes lapping, hard polishing and chemical mechanical polishing (CMP) to process SiC to insure the quality. Hard polishing is the procedure between lapping and CMP, so it has to remove the damage layer, causing from lapping, and process the SiC wafer to the certain thickness to let CMP process easy to conduct simultaneously. In this paper, it will analyze the effect of different processing factors on the surface quality and removal rate of SiC wafer during hard polishing. Furthermore, this study will use acoustic emission sensor to analyze hard polishing process. By collecting the correlation between acoustic emission signal values and material removal rates under different polishing conditions, trying to establish the removal rate prediction model of SiC wafers in hard polishing process.

摘要 I
目錄 IV
圖目錄 VI
表目錄 XI
第一章 緒論 1
第二章 文獻回顧 5
2-1碳化矽晶圓加工方法 5
2-2聲發射感測器的功能及應用 9
第三章 研究目的與方法 19
3-1拋光後晶圓的表面特性要求 19
3-2拋光製程的可控拋光參數 20
3-3實驗規劃與實驗步驟 23
第四章 研究結果與分析 31
4-1拋光參數的影響分析 31
4-1.1拋光參數對聲發射訊號值的影響分析 31
4-1.2拋光參數對材料移除量的影響分析 34
4-1.3拋光參數對表面不均勻度的影響分析 36
4-2預測模型的建立 71
第五章 結論與建議 86
參考文獻 88

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