今銅銦鎵硒硫薄膜太陽能電池因其高轉換效率而備受關注，為了更進一步提升元件表現及穩定性，許多團隊使用氧化鋅鎂取代氧化鋅做為高阻值窗口層以增加短波長的載子收集與達到更好的能帶匹配，而最普遍鍍製氧化鋅鎂窗口層的方式以濺鍍與原子層沉積為主。
本碩士論文第一部分討論以不同製程條件單靶濺鍍鍍製氧化鋅鎂窗口層對元件表現的影響。由於我們使用的試片上為硫氧化鋅的緩衝層，相較於傳統的硫化鎘緩衝層較不耐電漿轟擊，我們藉由改動holder位置以增加靶材與基板的距離來降低濺鍍損傷對元件表現的影響
第二部分探討後退火對元件表現與光浸潤行為的影響，發現低溫退火對元件表現無明顯幫助，但因能有效降低Zn(O,S)緩衝層內的Zn(OH)2，能有效提升元件穩定性，降低光浸潤效應對元件表現的影響。
第三部分將探討窗口層與緩衝層的能帶匹配對元件表現的影響，我們透過使用不同成分的Zn(O,S)緩衝層與氧化鋅鎂窗口層做搭配， 藉XPS縱深分析發現當Zn(O,S)緩衝層中的S/(S+O)落在一最佳區間時，搭配我們的氧化鋅鎂窗口層因更好的能帶匹配而能更進一步提升元件轉換效率。最後，我們能在銅銦鎵硒硫薄膜太陽能電池上無須抗反射層便能達到轉換效率達16.97%。

Cu(In,Ga)(S,Se)2 (CIGS)-based thin film solar cells have much drawn more attention than before in solar cell fields recently. In order to enhance its power conversion efficiency and device stability, ZnMgO window layer instead of i-ZnO with Zn-based buffer has been adopted into their processes by many groups in view of short wavelength absorption and favorable band alignment. At the present, the common ways to deposit ZnMgO are sputtering and atomic layer deposition.
In the first part of my master thesis, due to samples with Zn-based buffer less resistant to plasma damage compared to traditional CdS buffer layer, we use the single target to deposit ZnMgO window layer in a soft way like increasing the distance between the gun and the holder.
In the second part of the thesis, we reduce the light soaking behavior on my samples by vacuum annealing. Annealed ones show less device stability due to the reduction of zinc hydroxide in Zn(O,S) buffer layer.
In the third part of the thesis, we discuss about the band alignment between buffer and window layer by depositing ZnMgO window layer on samples with different buffer composition. There is the optimum S/(S+O) ratio in Zn(O,S) verified by XPS depth profile combined with ZnMgO window layer to achieve high conversion efficiency. Finally, we can achieved 16.95% conversion efficiency on Cu(In,Ga)(S,Se)2 solar cell with Zn(O,S) buffer without anti-reflection coating.

第1章、引言 1
第2章、文獻回顧 2
2-1、太陽能電池原理 2
2-1-1、工作原理 2
2-1-2、電壓-電流分析 3
2-2、銅銦鎵硒(CIGS)太陽能電池介紹 4
2-3、高阻值窗口層(Highly Resistive and Transparent Layer,HRT-Layer)介紹 6
2-4、ZnMgO窗口層發展 6
2-5、光浸潤(Light soaking)效應 9
2-5-1、硒銅雙空孔(VSe-VCu)模型 9
2-5-2、Zn(OH)2模型 10
2-5-3、氧硫比模型 10
第 2 章 儀器介紹與實驗流程 12
3-1、儀器介紹 12
3-1-1、製程機台 12
3-1-2、加熱機台 13
3-1-3、量測機台與分析儀器 14
3-2、試片製備與實驗流程 18
第 3 章 、結果與討論 19
4-1、單靶濺鍍Zn0.74Mg0.26O對銅銦鎵硒太陽能電池的影響 19
4-1-1、不同偏心位置對薄膜性質的影響 20
4-1-2、不同偏心位置對元件表現的影響 21
4-2、退火效應及其對光浸潤行為的影響 24
4-2-1、退火對元件表現與光浸潤行為影響 25
4-2-2、XPS成分縱深分析 28
4-3、製作高效率銅銦鎵硒硫(Cu,In,Ga(S,Se)2)太陽能電池的關鍵因素—緩衝層與窗口層的能帶匹配 30
4-3-1、Cu(In,Ga)(S,Se)2吸收層對元件表現之影響 32
4-3-2、Zn(O,S)緩衝層對元件表現之影響 36
4-3-3、以SCAPS 模擬介面能帶匹配 39
第5章、結論 43
參考文獻(Reference) 44

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