隨著半導體製程走向越來越小的尺寸，EUV光阻材料將是未來半導體微影製程發展的關鍵材料。我們目標為發展新的EUV光阻材料且可以供給業界使用。我們除了改良已發表專利–十二-錫團簇，同時也發展新結構的光阻材料，從十二-錫團簇的曝光結果，我們也推測了曝光後的可能反應機構，藉此可以設計更感光的酸根以達到更佳的結果。

As the semiconductor manufacturing processes go smaller and smaller in size, EUV photoresist becomes a pivotal material for the development of semiconductor lithography process in the future. We aim to develop a new EUV photoresist, which can be readily employed in industry. In doing so, not only have we improved the reported patent on 12-tin cluster, but also we have synthesized photoresists with new structure. Having the exposure results of 12-tin cluster, we propose a possible mechanism for 12-tin cluster on being exposed to EUV light. Based on mechanistic study, it was found that more sensitive carboxylic acids can be functionalized to achieve better results.

中文摘要 I
英文摘要 II
目錄 III
表目錄 V
圖目錄 VII
附錄目錄 IX
第一節 緒論 1
第二節 文獻回顧 2
2-1前言 2
2-2 十二-錫團簇 4
2-3 六錫團簇 6
2-4 三-錫團簇 7
2-5 二聚體-錫團簇 8
第三節 結果與討論 9
3-1 實驗動機與構思 9
3-2 十二錫-團簇與多種共厄離子 9
3-3 六錫團簇與多種酸根 12
3-4 三-錫團簇 13
3-5 雙酸根錫單體 13
3-6實驗參數設定 16
3-7十二-錫團簇實驗數據分析 20
3-7-1十二-錫團簇曝光結果—肉眼判斷 20
3-7-2十二-錫團簇曝光結果—SEM分析 22
3-7-3十二-錫團簇曝光結果—可能反應機構 30
3-8六-錫團簇實驗數據分析 33
3-8-1六-錫團簇實驗數據分析—肉眼判斷 33
3-8-2六-錫團簇曝光結果—SEM分析 34
3-8-3六-錫團簇曝光結果—可能反應機構 38
第四節 結論 39
第五節 實驗部分 40
(一)實驗的操作通則 40
5-1-1 溶劑 40
5-1-2儀器部分 41
(二)酸根及鹽類的合成 42
5-2-1 酸根AC-1的合成 42
5-2-2 銀鹽類的合成 42
(三)錫團簇及錫單體反應基本步驟 43
5-3-1十二-錫團簇的合成 43
5-3-2六-錫團簇的合成 45
5-3-3三-錫團簇的合成 45
5-3-4 雙酸根錫單體 46
(四)實驗數據資料 46
5-4-1 光譜數據資料 46
5-4-2 X-ray晶體結構數據資料 61
第六節 參考資料 215

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