隨著時代的進步，電子顯微鏡也不斷地蓬勃發展，而其中TEM臨場觀測更是近年來科學家努力發展之觀測方式，如加熱及流體臨場觀測系統，因其提供了真實環境下物質變化過程之分析。
本研究之目的是開發新型加熱晶片，而此加熱晶片可以在TEM中建構出溫度梯度。不同於舊式單迴圈加熱晶片提供單一溫度，此加熱晶片利用兩組加熱線圈，施予不同的電流以產生不同的溫度，在微小的距離建構出溫度梯度，並搭配與其相符合的晶片載台，使我們可以在穿透式電子顯微鏡中觀察物質因溫度梯度所產生之反應。
此加熱晶片採用微機電製程，經由黃光微影定義出加熱線圈的圖形，利用電子束蒸鍍在矽晶片上沉積厚度為200nm之Pt or Ni當作加熱線圈，隨後沉積Si3N4將加熱線圈絕緣，利用KOH濕蝕刻並搭配Focus ion beam切割出直徑約6μm之觀測視窗，可以使電子束穿透並成像，以用於觀測試片。
在電子元件日益微小化的過程中，散熱是最需要克服的課題。在微小的電子元件中，因為元件發熱而產生的溫度梯度會造成UBM材料的擴散速度不同，導致焊錫出現缺陷，進而影響電子元件的使用。因此本研究選擇電子封裝技術中焊錫的Cu/Sn介面當作觀測試片，試圖利用自行設計的加熱晶片觀察Cu因溫度梯度而產生擴散的行為，甚至進一步解決電子封裝上的問題。

As time progresses, the development of electron microscopy keeps moving forward constantly, and in-situ observation of TEM is a new method that scientists have been developing hard in recent years. Such as heating and fluid in-situ observation systems, which provides an analysis of the process that materials change in real environment. The purpose of this study is to develop a new type of heating chip that differs from the old single-loop heating chip that it can only provide a single temperature. This heating chip utilizes two sets of heating coils, which can produce different temperatures between a small distance. By constructing a temperature gradient and matching it with the TEM holder, we can observe the reaction caused by temperature gradient in transmission electron microscope.
This heating chip uses the microelectromechanical process to define a pattern of the heating coil by lithography, depositing Pt or Ni as a heating coil having a thickness of 200nm on silicon wafer by electron beam evaporation, and then depositing Si3N4 to insulate the heating coil. Using KOH wet etching and focus ion beam to cut a viewing window with a diameter about 6 μm that allows the electron beam to penetrate and imaged for viewing the sample.
In the process of increasing the miniaturization of electronic components, heat dissipation is the most important problem to be overcome. In tiny electronic components, the temperature gradient caused by heat causes a difference of the diffusion speed of Cu, which causes defects in solders, which in turn affects the use of electronic components. Therefore, this study selects the Cu/Sn interface of solder in electronic packaging technology as sample, and attempts to observe the diffusion behavior of Cu due to the temperature gradient by using the self-designed heating chip, and even further solve the problem of the electronic package.

摘要 i
Abstract ii
致謝 iv
圖目錄 ix
第一章 緒論 1
1.1 顯微鏡的發展 1
1.1.1 光學顯微鏡的發展 1
1.2 電子顯微鏡的發展 3
1.2.1 掃描式電子顯微鏡 4
1.2.2 穿透式電子顯微鏡 6
1.3 研究動機 8
第二章 文獻回顧 9
2.1 電子顯微鏡加熱載具 9
2.1.1 穿透式電子顯微鏡加熱載具 10
2.1.2 微機電製程之微型加熱器 14
2.2 臨場加熱電子顯微鏡之分析 19
2.2.1 高溫臨場相變化之分析 19
2.2.2 臨場觀測奈米結構成核與成長 22
2.2.3 臨場觀測原子擴散與電遷移現象 29
2.3 熱遷移 32
2.3.1 熱遷移之基礎原理 32
2.3.2 無鉛焊錫中之熱遷移 34
2.3.3 UBMs材料之熱遷移 37
第三章 載具開發與實驗方法 40
3.1 實驗大綱 40
3.2 製程設備 41
3.3 分析儀器 43
3.4 穿透式電子顯微鏡之加熱系統架設 46
3.4.1 儀器設備 47
3.5 樣品桿設計與製作 48
3.6 微型加熱晶片設計與製作 50
3.6.1 晶片結構設計 50
3.6.2 光罩繪製與製作 51
3.6.3 黃光微影 52
3.6.4 微型加熱晶片製作流程 55
3.7 加熱晶片溫度校正之儀器校正 59
3.8 穿透式電子顯微鏡臨場觀測之加熱系統架設 61
3.8.1 設備儀器 61
3.8.2 實驗步驟 62
第四章 結果與討論 63
4.1 加熱晶片 63
4.1.1 觀測視窗形狀定義 63
4.1.2 確認觀測視窗 65
4.1.3 加熱晶片之溫度校正 66
4.1.4 加熱晶片與試片之結合 68
4.2 TEM臨場觀測 70
第五章 結論 72
第六章 參考文獻 73

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