為了實現邏輯元件與光通訊系統整合，在短距離中進行光訊號的傳輸，使數據傳輸速度與資訊量更大，矽光子領域在這之中扮演了重要的角色，然而關鍵材料矽卻不適合做為光源。因此，本文將致力於將銻化鎵整合於矽基板上，透過快速熱熔磊晶法(RMG)將非晶的銻化鎵轉變為單晶，並使用不同的鈍化方法來進一步提升磊晶品質。
但將三五族材料整合於矽基板上的異質整合也有著許多挑戰，像是會產生反相位介面、晶格常數不匹配、材料間熱膨脹係數差異過大等問題。因此，需要優化溫度、材料比例等參數，以及透過鈍化方法處理銻化鎵表面，使快速熱熔磊晶的過程更順利。
量測部份，運用光致發光系統(PL)、穿透式顯微鏡、EDS、SAD、Raman、AFM觀察發光效率，分析材料比例與鍵結，判別晶向以及觀察粗糙度。最後發現在鎵含量65%的銻化鎵會有較好的發光效率。快速熱熔磊晶的過程中，超過熔點的時間要短，溫度要接近熔點。透過將純銻層覆蓋於原本的銻化鎵上能夠減少鎵與矽的擴散，使快速熱熔磊晶的過程能更順利地複製晶向，減少被雜質干擾。

In order to integrate logic device with optical communication systems, the transmission of optical signals in a short distance makes the data transmission speed and information larger. Silicon photonics plays an important role in this thing, but Silicon is still not appropriate to be light source. Therefore, this paper will focus on the integration of Gallium Antimonide (GaSb) on the Silicon substrate, recrystallizing the amorphous Gallium Antimonide into single crystal by Rapid-Melt-Growth (RMG), and use different passivation methods to further enhance the epitaxial quality.
But there are many challenge for the heterogeneous integration of the III-V materials integrated into Silicon substrate. Such as anti-phase boundary, lattice misfit (13%), thermal expansion coefficient difference between the materials is too large and so on. Accordingly, the parameters of the temperature and the material ratio needs to be optimized, and passivate GaSb surface for doing RMG better.
In measurement section, using Photoluminescence system (PL), Transmission Electron Microscopy (TEM), EDS, SAD, Raman, AFM to observe the emitting efficiency, analyze material ratios , bonding, crystal orientation and the roughness. Finally, it shows that Ga with 65% would have better emitting efficiency. By covering the pure Sb layer on the original GaSb surface, the diffusion of Ga and Si can be reduced. Replicate the crystal orientation better when doing RMG, and reduce the interference of impurities.

摘要 II
目錄 IV
圖目錄 VI
表目錄 XIII
第一章 緒論 1
1.1 前言 1
1.2研究動機與目的 3
1.3論文架構 6
第二章 理論背景 7
2.1銻化鎵元素介紹 7
2.2矽與III-V族異質整合 11
2.3 III-V族磊晶文獻回顧 16
2.4 表面鈍化處理概念與種類 23
第三章 快速熱熔磊晶法(RMG)與結構設計 25
3.1快速熱熔磊晶法原理 25
3.2使用電子槍及熱蒸鍍系統做物理氣相沉積 31
3.3鈍化處理之結構設計 34
第四章 元件製作流程與量測系統 38
4.1元件製作流程圖 38
4.2元件製作細節以及重要參數 40
4.3 實驗架設與量測方法 47
第五章 實驗量測與分析 49
5.1高濃度銻化鎵對磊晶的影響 49
5.2使用濕蝕刻處理銻化鎵表面對磊晶之影響 59
5.3氧化鎵在銻化鎵表面對磊晶之影響 63
5.4使用純銻層保護銻化鎵表面對磊晶之影響 69
第六章 結果與討論 80
6.1結論 80
6.2未來展望 81
參考資料 82

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