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作者(中文):吳 漢
作者(外文):Wu, Han
論文名稱(中文):以電漿輔助化學氣相沉積法沉積氮化矽薄膜及其與二氧化矽之堆疊膜之低溫機械損耗
論文名稱(外文):Cryogenic Mechanical Loss of SiNxHy and SiN0.40H0.79/SiO2 Stacks Deposited by Plasma Enhanced Chemical Vapor Deposition Method
指導教授(中文):趙煦
指導教授(外文):Chao, Shiuh
口試委員(中文):李正中
陳至信
口試委員(外文):Lee, Cheng-Chung
Chen, Jyh- Shin
學位類別:碩士
校院名稱:國立清華大學
系所名稱:光電工程研究所
學號:104066516
出版年(民國):106
畢業學年度:106
語文別:中文
論文頁數:83
中文關鍵詞:電漿輔助化學氣相沉積法二氧化矽氮化矽重力波機械損耗
外文關鍵詞:PECVDsilicon dioxidesilicon nitridegravitational wavesmechanical loss
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雷射干涉重力波組織(LIGO, Laser Interferometer Gravitational-Wave Observatory)為一大型麥克森干涉儀,其目的為量測重力波,2015年9月LIGO於Hanford, WA 及Livingston, LA的兩座觀測站第一次偵測到重力波訊號,提出以麥克森干涉儀偵測重力波的Weiss、Thorne、Barish更在2017年因此獲得諾貝爾物理學獎。以往人們藉由電磁波觀察天文現象,日後可望以重力波觀察更多電磁波觀察不到的現象。而重力波訊號對干涉儀之變化只有10-21,必須降低雜訊干擾以提高靈敏度, LIGO最靈敏之頻段在100Hz附近,其主要雜訊來源為quantum noise與coating Brownian noise,本實驗室致力於降低coating Brownian noise,此為干涉儀反射鏡上光學薄膜材料熱擾動造成之雜訊,根據fluctuation-dissipation theorem其與溫度及機械損耗成正比,藉由量測機械損耗可研究此雜訊。
本文第一部分探討以PECVD製作氮化矽薄膜之低溫機械損耗。低溫機械損耗隨氮矽比增加而增加,SiN0.40H0.79損耗最低、SiN0.87H0.93損耗最高且甚至在40K附近形成損耗峰,此峰可以活化能方式進行分析並解釋其產生原因。
本文第二部分探討四分之一1550nm波長SiN0.40H0.79/ SiO2堆疊膜之低溫機械損耗。4-pair及8-pair堆疊膜損耗量測結果相近,表示SiN0.40H0.79 /SiO2介面對低溫機械損耗影響不大。堆疊膜量測損耗值介於SiN0.40H0.79與SiO2之間,且在40K附近具有如SiO2之損耗峰,判斷此峰由SiO2造成。4-pair及8-pair在120K、675Hz之機械損耗為2.07×10-4及2.10×10-4,且其尚未退火,具有潛力應用於未來低溫LIGO之反射鏡光學薄膜材料。
Laser Interferometer Gravitational-Wave Observatory (LIGO) detected the gravitational wave came from two black holes merged in 2015. Weiss, Thorne and Barish received Nobel Prize because of their contribution. From now on we can observe astronomical phenomena using not only electromagnetic wave but also gravitational wave. Gravitational wave signal caused about 10-21 change to the arms of the interferometer. It was so small that LIGO couldn’t detect weaker signals came from other astronomical phenomena. This research is dedicated to enhancing the signal to noise ratio of LIGO. As the frequency of signal is about 100Hz, the noise is dominated by quantum noise and coating Brownian noise. Coating Brownian noise comes from the material coated on the mirrors of the interferometer. It is a kind of thermal noise which is proportional to mechanical loss and temperature according to Fluctuation-Dissipation Theorem. We can investigate this noise by measuring mechanical loss of materials.
In the first part of this thesis, we fabricated SiNxHy thin films by Plasma Enhanced Chemical Vapor Deposition (PECVD). We coated it on cantilevers and measured its cryogenic mechanical loss. The loss of SiN0.40H0.79 was lowest and SiN0.87H0.93 was largest. We deduced that loss increased as silicon to nitrogen ratio increased. There was a loss peak in SiN0.87H0.93 at around 40K. We used two level system to explain its loss mechanism and calculated its activation energy.
In the second part of this thesis, we fabricated 4-pair and 8-pair SiN0.40H0.79/SiO2 stacks by PECVD. Their cryogenic mechanical losses were similar. It was believed that SiN0.40H0.79/SiO2 interface would not cause too much extra cryogenic loss. There was a cryogenic peak in the stacks at around 40 K. We believed the loss peak was caused by SiO2. The mechanical loss of 4-pair and 8-pair stacks were 2.07×10-4 and 2.10×10-4 respectively at 675 Hz, 120K. SiN0.40H0.79/SiO2 stack was a potential material to be used for LIGO in the future.
Abstrate II
摘要 IV
致謝 V
目錄 VI
圖目錄 IX
表目錄 XII
第一章、導論 1
1.1 前言 1
1.2 研究動機 2
第二章、氮化矽薄膜製程及低溫機械損耗量測系統 6
2.1單晶矽懸臂基板製程 6
2.2氮化矽及二氧化矽薄膜製程 8
2.3機械損耗原理及低溫量測系統介紹 9
2.3-1機械損耗原理 9
2.3-2低溫機械損耗量測系統 11
2.4矽懸臂夾持方式優化進程 14
2.4-1夾持矽懸臂之扭力對機械損耗的影響 14
2.4-2矽懸臂夾持及對準方式之優化 15
2.5試片量測溫度循環與重複夾持 18
2.5-1溫度循環對機械損耗的影響 18
2.5-2重複夾持對機械損耗的影響 20
第三章、不同氮矽比例之氮化矽薄膜低溫機械損耗 22
3.1氮化矽薄膜之基本特性簡介 22
3.2不同氮矽比例之氮化矽之低溫機械損耗 22
3.2-1矽懸臂基板之低溫機械損耗結果分析 22
3.2-2不同氮矽比例之氮化矽薄膜低溫機械損耗量測結果分析 26
3.3 SiN0.87H0.93之低溫機械損耗峰值分析 34
3.3-1 SiN0.87H0.93低溫機械損耗峰值成因探討 34
3.3-2 SiN0.87H0.93低溫機械損耗峰值之活化能分析 37
3.4結果討論 43
第四章、氮化矽與二氧化矽堆疊膜之低溫機械損耗 45
4.1氮化矽與二氧化矽堆疊膜之設計簡介 45
4.2 二氧化矽薄膜之機械損耗 46
4.2-1 二氧化矽薄膜低溫機械損耗量測結果分析 46
4.2-2 二氧化矽低溫機械損耗峰值之活化能分析 49
4.3 氮化矽與二氧化矽堆疊膜之機械損耗 51
4.3-1 4-pair及8-pair SiN0.40H0.79/SiO2堆疊膜低溫機械損耗量測結果分析 51
4.3-2 以SiN0.40H0.79及SiO2之低溫機械損耗量測值計算堆疊膜機械損耗理論值 54
4.3-3 堆疊膜結構對低溫機械損耗的影響 57
4.4 SiN0.40H0.79/SiO2堆疊膜低溫機械損耗峰值之活化能分析 58
4.5 結果討論 62
第五章、結論與未來展望 66
5.1 結論 66
5.2未來展望 67
附錄 69
A SiN0.40H0.79、SiN0.65H0.60、SiN0.87H0.93、SiO2、4-pair、8-pair之兩次夾持coated loss angle比較 69
B SiN0.87H0.93、SiO2及4-pair、8-pair堆疊膜低溫損耗峰值擬合 73
C 矽基板數據統整 77
參考文獻 79
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