市售晶體矽太陽能電池發展至今，效率的提升已面臨瓶頸，故除了追求效率提升以外，降低成本也是現今趨勢。以N型矽基板為主製作的太陽能電池較能避免光致衰減效應（LID），且相對於P型矽基板為主的太陽能電池，此類太陽能電池較不受其他金屬雜質的影響，故會有較好的效率。
　　本篇將以背部印刷鋁漿料後一步驟共燒結的方式，同時進行摻雜及正背面電極燒結，藉由觀察填充因子及效率等太陽能電池參數，探討同樣電阻值矽基板中較適合的燒結參數，而後比較不同電阻值矽基板下此類架構的表現，最終嘗試製作仿ＰＥＲＣ－Ｐ型矽基板的局部鈍化背部射極結構並比較。

Compared with p-type crystalline silicon solar cells, n-type crystalline silicon solar cells can reach better performance because n-type solar cells do not suffer from light-induced degradation and have better tolerance of impurities. Some fabrication processes for n-type silicon solar cells are the same as those for p-type solar cells. Taking the process of anti-reflection layer deposition for example, both types of cells may use the PECVD technique for silicon nitride deposition at the front side. Pyramid formation through alkaline etching to trap light at the front surface is also the same process for both types. However, there are some processes for n-type solar cells that are different from those for p-type solar cells.
In this paper, we form emitter by co-firing screen-printed aluminum at the rear side of an n-type crystalline silicon. First, by comparing the performance of different co-firing parameters, we find the best firing temperature in forming rear emitters. Then we use the same temperature for co-firing the cells with higher wafer resistivity. In the study, we also investigate the cell performance as a passivation layer of Al2¬O3 is formed at the rear side.

第一章　序論.....1
1-1 研究背景.....1
1-2 文獻回顧.....4
1-3 研究動機與目的.....5
1-4 論文架構.....6
第二章　實驗原理.....7
2-1 半導體元件物理.....7
2-1.1 固體材料分類.....7
2-1.2 能帶理論.....9
2-1.3 光吸收與材料能隙.....12
2-1.4 半導體摻雜.....14
2-1.5 PN接面（PN junction）.....16
2-2 太陽能電池原理.....17
2-2.1 太陽光.....17
2-2.2 光伏效應.....19
2-2.3 太陽能電池等效電路.....20
2-2.4 太陽能電池參數.....21
第三章　實驗流程.....24
3-1 儀器介紹.....24
3-2 實驗步驟.....27
3-2.1 前置清潔.....29
3-2.2 隨機金字塔形成.....30
3-2.3 磷擴散.....31
3-2.4 磷玻璃去除.....31
3-2.5 抗反射層沉積 (ARC coating).....32
3-2.6 濕式氧化法生長氧化鋁鈍化層.....32
3-2.7 網印.....33
3-2.8 共燒結.....33
第四章　實驗數據與討論.....35
4-1 鋁漿料於高溫環境下共熔觀察.....35
4-2 低阻值n型矽基板效率表現.....37
4-3 高阻值n型矽基板效率表現.....39
4-4 正面鈍化層與抗反射層影響觀察.....40
4-5 背部局部鈍化架構試驗.....43
第五章　結論.....48
參考文獻.....50

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