過渡金屬二硫屬化物(Transition metal dichalcogenide, TMDC)在這幾年被大量的研究，在數位元件、類比元件、微波元件、光電元件、可撓式元件等應用方面皆有不錯的表現，而大面積的成長正是上述所有應用的基本。雖然目前化學氣相沉積法已經可以成長大面積TMDC薄膜，但這些薄膜大多是由不同晶格方向的單晶所組成，為多晶的薄膜，於單晶與單晶的交界處便會有許多的晶界(Boundary)，在電性傳導中影響甚鉅。故我們藉由加入氯化鈉作為催化劑一起成長，期望能長出大小超過50 μm的單晶二硒化鎢(WSe2)。另一方面，我們亦使用對前驅物(Precursor)更精準控制的金屬有機化學氣相沉積法(Metal organic chemical vapor deposition, MOCVD)，期望能長出缺陷更少的二硫化鉬(MoS2)薄膜。最後，由於近幾年電子束相關的檢測儀器被大量的研究及使用，發現了高能電子束在與材料交互作用後會讓材料有著不一樣的特性，我們便針對電子束對二硒化鎢材料的影響作分析，以期能在不外加任何摻雜下做出p-type和n-type的元件。

Transition metal dichalcogenide, TMDC, has been researched in recent years and got great progress in digit、analogy、microwave、optical、flexible devices, and large-area growth is the basis of all above. While CVD can grow large-area films now, but they are polycrystalline films with many boundaries, and these boundaries affect carrier transport a lot. In this thesis, we introduce NaCl as catalysts successfully enlarge single crystal WSe2 to exceeding 50 μm. In the other hand, we use MOCVD to precisely control precursor flow and expecting to grow less-defect, large-area monolayer MoS2 film. In the end, due to electron beam related instruments have been used in many research, and some papers have revealed that high energy electron beam will interact with samples. So, we do some analysis about how electron beam lithography system affect single crystal WSe2.

論文摘要............................................I
Abstract..........................................III
目錄...............................................VII
第一章 緒論.........................................1
1.1 半導體元件之發展與局限...........................1
1.2 二維材料介紹.....................................2
1.3 二維材料製備方式.................................3
1.4 論文結構........................................5
第二章 過渡金屬二硫屬化物之基本特性....................7
2.2 過渡金屬二硫屬化物之晶體結構......................7
2.3 二硒化鎢與二硫化鉬之電子能帶......................9
2.4 二硒化鎢與二硫化鉬之聲子能帶.....................11
第三章 化學氣相沉積與材料檢測........................13
3.1 化學氣相沉積原理................................13
3.1.1 薄膜沉積.....................................13
3.1.2 化學氣相沉積反應機制..........................14
3.2 二維材料檢測....................................19
3.2.1 拉曼散射光譜..................................19
3.2.2 光致螢光光譜..................................21
3.2.3 X射線光電子能譜學.............................22
3.2.4 原子力顯微鏡..................................24
3.2.5 穿透式電子顯微鏡..............................26
第四章 低壓化學氣相沉積法成長單晶二硒化鎢.............29
4.1 實驗設備與流程..................................29
4.2 成長參數調變結果................................30
4.2.1 未使用氯化鈉催化劑成長.........................30
4.2.2 使用氯化鈉催化劑成長...........................36
4.3 材料檢測與分析..................................44
4.3.1 拉曼散射頻譜..................................44
4.3.2 光致螢光光譜..................................46
4.3.3 原子力顯微鏡..................................48
4.3.4 穿透式電子顯微鏡..............................49
第五章 金屬有機化學氣相沉積法成長大面積二硫化鉬薄膜....51
5.1 實驗設備與流程..................................51
5.2 成長參數調變結果................................53
5.2.1 單通道管線及未使用氯化鈉催化劑成長..............54
5.2.2 雙通道管線設計及使用氯化鈉催化劑成長............57
5.3 材料檢測與分析..................................60
5.3.1 拉曼散射頻譜..................................61
5.3.2 光致螢光光譜..................................63
5.3.3 原子力顯微鏡..................................64
5.3.4 X射線光電子能譜...............................65
5.3.5 穿透式電子顯微鏡..............................67
第六章 二硒化鎢電子特性結果分析.......................69
6.1 拉曼頻譜分析....................................69
6.2 光致螢光光譜分析................................71
6.3 電性量測與分析..................................73
第七章 結論與未來展望................................77
參考文獻............................................79

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