在過去，我們應用於空間電荷限制電晶體(Space-Charge-Limited Transistor)的高分子載子傳輸材料為poly(3-hexylthiophene)，P3HT，其載子遷移率不高，導致輸出電流不夠大。若我們需要驅動高電壓的顯示器面板或電子紙時，則需要讓元件操作在高偏壓的狀況。因此本論文將探討高分子材料應用在SCLT元件的電晶體特性，另外為了讓SCLT成為驅動電晶體，我們也對元件施加一段時間的偏壓，並透過計算臨限電壓偏移值來觀察元件的穩定度。希望透過改善製程條件、反覆的試驗，製造出具高輸出電流、低漏電的高分子有機垂直電晶體元件。目前透過不斷的改善與嘗試，我們已經可以做出開關比高達數萬與輸出電流密度達到數十的SCLT元件。

In the past,we applied conjugated polymer material poly(3-
hexylthiophene),P3HT,as an active layer material in space-charge- limited-transistor(SCLT).However,the low carrier mobility of P3HT results in the low output current of SCLT.In order to drive display panel or e-paper,the higher bias voltage is necessary.In this dissertation,polymer materials were applied to SCLT.On the other hand,to make our SCLT become diving transistor,we apply bias on our component,and observe its stability by calculating the critical voltage.We hope to realize high output current and low leakage current by applying different kinds of process conditions. After several improvements and condition changes,we can realize SCLT which on/off ratio is up to tens of thousands,and the output current is up to two digits.

摘要-I-
Abstract-II-
致謝-III-
目錄-IV-
圖目錄-VI-
Chapter 1 緒論-1-
1-1研究背景-1-
1-2研究動機-2-
1-3論文架構-3-
Chapter 2 有機材料簡介與元件操作原理-4-
2-1有機材料簡介-4-
2-1-1有機絕緣層材料-4-
2-1-2主動層材料-5-
2-2金屬與半導體接面-9-
2-3載子傳輸理論(空間電荷限制理論)-11-
2-4固態真空管原理-13-
2-5空間電荷限制電晶體結構與操作原理-14-
Chapter 3 有機垂直式電晶體元件製程-19-
3-1銦錫氧化物(ITO)基板圖案定義製程-19-
3-2有機絕緣層-23-
3-3聚苯乙烯奈米球溶液配製-23-
3-4電洞傳輸層材料溶液配製-24-
3-5旋轉塗佈法-24-
3-6刮刀塗佈主動層與上電極-25-
3-7高耐壓有機垂直式電晶體製程-28-
3-7-1增厚絕緣層-29-
3-7-2蒸鍍SiOx-33-
3-8以紫外光臭氧(UV Ozone)處理之標準SCLT製程-38-
Chapter 4 元件量測結果與特性討論-39-
4-1經紫外光臭氧(UV Ozone)處理的高分子SCLT元件-39-
4-2刮刀塗佈下料滴量探討-41-
4-3刮刀塗佈速度的探討及聚苯乙烯奈米球選擇-44-
4-4刮刀板成膜溫度及退火溫度探討-47-
4-5耐壓元件主動層及有機層溶液濃度的探討-51-
4-6耐壓元件特性與結果-55-
4-7持續偏壓效應(Bias Stress Effect)-58-
4-8臨界電壓偏移值探討-59-
Chapter5總結與未來展望-61-
參考文獻-63-

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