本論文著重於有機垂直式電晶體(SCLT)微影製程元件之電性，並且討論其改善元件電流密度方式。可以分成三個部分。
第一部分，以往微影之標準元件均是以掀離法方式得到結構，然而掀離法製程之元件其工作時電流密度遠不如標準元件，為了了解使用掀離法所製作出之元件其電流密度低落的可能原因，我們依序分析製程上可能造成元件電流低落的步驟。
第二部分，藉由第一部分所提出的問題逐一進行改善，藉由將掀離法製程更改成蝕刻法製程的方式，成功地使P3HT犧牲層能夠應用於微影製程上，改善金屬網格結構，使整體電流密度大幅提升。
第三部分，為了顯示器之規格尺度，SCLT元件則必須縮小至微米等級的尺度，藉由前兩部分的微影製程，我們成功地在3cm x 4cm之玻璃基板上製作出主動區大小80µmx 80µm之SCLT。

This thesis is the study of the characteristic of vertical organic transistor processed by lithography, and the discussion of a method to enhance the device's current density.
The thesis is divided into the following three parts:

Part I, we obtain the standard device of lithograghy by lift-off however ,the operating current density of device by lift-off is much lower than standard device, so we analyze the standard lift-off production process and find the problems that result in the low current density.

Part II, by solving the problems found in Part I, we change lift-off to etching, and successfully apply P3HT sacrifice layer into lithography which improves the metal mesh structure, and enhance the current density eventually.

Part III, with Part I and Part II, we successfully miniature SCLT into the active area of 80 um X 80 um on a 3cm X 4cm glass substracte to fit the scale of display.

國立清華大學 I
垂直式有機電晶體微影製程之電流密度改善探討 III
Abstate IV
目錄 V
圖目錄 VIII
Chapter 1緒論 1
1-1研究背景 1
1-2研究動機 2
1-3論文架構 3
Chapter 2 有機材料簡介與元件操作原理 4
2-1 有機材料簡介 4
2-1.1 有機共軛高分子材料 4
2-1.2有機絕緣層材料 7
2-2金屬與半導體接面 8
2-3注入限制電流 10
2-4載子傳輸理論 (空間電荷限制理論) 11
2-5固態真空管原理 14
2-6空間電荷限制電晶體結構與操作原理 14
Chapter 3 有機垂直式電晶體相關製程 17
3-1 有機薄膜塗佈製程 17
3-1.1 旋轉塗佈 17
3-1.2 刮刀塗佈 18
3-2 有機溶液配製方式 19
3-2.1 有機絕緣層溶液製備 19
3-2.2 有機傳輸層溶液製備 20
3-2.3 聚苯乙烯奈米球溶液製備 20
3-3空間電荷限制電晶體(SCLT)標準製程 20
3-3.1 下電極製程與有機絕緣層 20
3-3.2 奈米金屬網格與柱狀結構 21
3-3.3 有機通道主動層及上電極 23
3-4微影製程 24
3-4.1 掀離法(Lift Off)微影製程[14] 24
3-4.2 蝕刻法微影製程 25
Capter 4 空間電荷限制電晶體微影製程 27
4-1 SCLT標準元件微影製程 27
4-1.1. 元件下電極(Collector) 27
4-1.2. 金屬網格基極(base)及柱狀結構 28
4-1.3. 有機通道主動層與上電極(emitter) 28
4-2 SCLT標準元件微影製程結果與討論 29
Capter 5空間電荷限制電晶體微影製程之電流密度探討及改善 31
5-1 濕式蝕刻液之選擇 31
5-1.1下電極鋁蝕刻液挑選 31
5-1.2金屬網格結構蝕刻液挑選 33
5-2下電極之蝕刻法微影製程 34
5-2.1 實驗製程 35
5-2.1 實驗結果與討論 36
5-3金屬網格基極之蝕刻法微影製程 36
5-3.1 實驗製程 37
5-3.2 實驗結果與討論 40
5-4 空間電荷限制電晶體 80µm x 80µm 面積製程 42
5-4.1掀離法微影製程 42
5-4.2 蝕刻法微影製程 44
5-4.3 實驗結果與討論 45
Chapter 6 總結與未來展望 47
Chapter 7 參考文獻 49

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