本論文之目的為探討擠壓薄膜效應在液體環境下的影響，並以共振頻率的變化測量液體黏度的變化。預期在液體環境下，利用兩平行板電極，經由提供電極電壓產生靜電吸引力，造成平板間的距離造成變化並造成電容變化，再藉由感測電路將電容變化轉為電壓變化並輸出，並且將感測結構及感測電路整合在同一晶片上，藉由觀察電容變化的頻率估算液體黏度的改變，電容式感測在過去的研究中，主要受限於感測結果容易被直接從驅動電極通過液體的驅動訊號影響，使原本在液體中震動位移已經降低許多的機械結構更不易感測出位移的電訊號，本篇使用調制的方式將機械結構訊號與驅動訊號分離，便能解決此問題。
本論文使用TSMC 2-polysilicon 4-metal 0.35-μm CMOS製程，並使用濕蝕刻將結構釋放，最後使用活性離子蝕刻將電路所需接點的金屬露出。整顆晶片大小為2.8 mm × 2.8 mm。量測部分可量測出機械結構在大氣壓下的共振頻率，也驗證了感測電路的正常功能，但是礙於由基板耦合訊號的影響，無法利用電路量測出結構的共振頻，未來仍須改善。

The purpose of this paper is to investigate the effect of the squeeze film damping effect in the liquid environment. Liquid viscosity studied by the change of resonance frequency. It is expected that in a liquid environment, by using two parallel plate electrodes, an electrostatic attraction force generated by supplying driving voltage to the electrodes, causes a change in the distance between the plates and a change in capacitance. Then the capacitance change is converted into a voltage change in the sensing circuit. The sensing structure and the sensing circuit are integrated on the same chip. Viscosity of the liquid is estimated by observing the resonant frequency changed by capacitive detection. In the past research, the capacitive sensing is mainly limited by the fact that the sensing result is easy to couple directly from the driving. The sensed signal is reduced in liquid. This study uses the modulation method to separate the sensed signal from the driving signal to solve this problem.
This paper uses TSMC 2-polysilicon 4-metal 0.35-μm CMOS process, and uses wet metal etch to release the structures. Reactive ion etch is used to expose the bond pads. The entire chip size is 2.8 mm × 2.8 mm. Resonance frequencies of the mechanical structures under atmospheric pressure are measured by optical instrument. Capacitive measurement of resonance frequency was hampered because of the influence of substrate coupling effect, which needs to be improved in the future.

摘要 I
Abstract II
致謝 III
目錄 IV
第一章 緒論 1
1-1前言 1
1-2研究動機 4
1-3文獻回顧 5
1-4論文架構 6
第二章 感測器設計與分析 8
2-1擠壓薄膜效應介紹 8
2-2 薄膜擠壓效應理論 9
2-3 感測結構設計與模擬 14
2-4 後製程設計 20
2-5 電容式感測與設計 23
2-6 臨界電壓 25
2-7 電路介紹與設計 27
第三章 量測 36
3-1 製程量測 36
3-2 結構振頻LDV量測 37
3-3 電路量測 42
3-4 結構共振頻率量測 45
第四章 結論與未來 50
4-1 研究成果與討論 50
4-2 未來工作 51
第五章 參考文獻 52

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