近幾年，隨著生醫電子領域的發展，生醫晶片逐漸展現出對於非揮發性記憶體的需求，例如仿神經電路中所需要的記憶功能，目前生醫晶片需要整合獨立的快閃記憶體，但由於內嵌式快閃記憶體的高製作成本以及製程的低彈性度，新的解決方法則為開發其他邏輯相容的非揮發性記憶體技術。
本論文提出一個具有類比儲存能力之無閘極一次性寫入類比記憶體，此記憶體元件相容於40奈米邏輯製程，不需要額外的光罩或特殊製程步驟。無閘極一次性寫入類記憶體利用電阻保護氧化層作為介電層，並以接觸蝕刻停止層氮化矽作為儲存節點，取代了傳統快閃記憶體運用浮動閘極作為儲存節點的特性；類比無閘極一次性寫入記憶體元件在離子佈值區的形狀經過斜邊設計型成一個梯形通道，在通道熱電洞引發熱電子的編程操作下，寫入的電子由最短通道開始導通，電流準位逐漸上升直到最長通道導通，利用此操作機制，類比無閘極一次性寫入記憶體(Analog Gateless One-Time-Programmable Memory, AGO)，能夠儲存一個電流區間中任意連續值之電流，達成寫入類比訊號的功能，除此之外，此記憶體元件有著低功耗、高寫入速度之優點，而電性分析也顯示出在資料保存度、連續讀取以及抗編程干擾測試中均表現出優秀的特性，NOR型陣列結構的可行性使得此種記憶體元件可望成為未來發展的主流。

In recent years, demands in the semiconductor memories has increased significantly. Biomedical electronics also gradually shows its demands for non-volatile memories, such as applications in neural circuit applications. Because of the high manufacturing cost and low flexibility of embedded Flash memory process, people are seeking solutions of NVM cells realized by pure CMOS logic technologies. In this paper, an Analog Gateless OTP memory (AGO) structure has been proposed for analog storage applications. Using Resistive-Protective-Oxide (RPO) film as dielectric layer and SiN Contact Etching Stop Layer (CESL) as storage node, replacing a floating gate in a traditional flash memory. Through a design of gateless transistor with a gradually increasing channel length, the p-type channel can be partially turn on by the injected electrons from the shortest to the longest channel region gradually. Hence, continuous read current level can be stored with analog data. In addition, AGO is not only fully compatible with CMOS logic process but it also has low power consumption and high program speed of 10s per cell. Moreover, AGO has excellent NVM characteristic with large current window, good retention and disturb immunity. Therefore, the AGO technology may become a promising solution for analog data storage in the future.

摘要………………………………………………………………………..i
Abstract…………………………………………………………………....ii
致謝……………………………………………………………………….iii
附圖目錄………………………………………………………………….vi
附表目錄………………………………………………………………….vii
第一章 序論……………………………………………………………...1
1.1 非揮發性記憶體簡介…………………………………………...1
1.2 研究動機………………………………………………………...2
1.3 論文大綱………………………………………………………...3
第二章 Logic NVM 技術回顧………………………………………….4
2.1 NeoBit Memory : Single Poly ERPOM………………………….4
2.2 NOI Memory : Nitride-Based Memory………………………….5
2.3 Gateless OTP Memory……..……………………………………6
2.4 類比非揮發性記憶體回顧……………………………………..7
2.5 小結……………………………………………………………..7
第三章 類比無閘極一次性寫入類比記憶體簡介……………………..12
3.1 元件結構………………………………………………………..12
3.2 載子注入機制…………………………………………………..13
3.3 類比記憶體操作原理…………………………………………..14
3.4 小結…………………………………………………………….15
第四章 元件量測結果是討論與分析………………………………….28
4.1 量測環境介紹………………………………………………….28
4.2 元件基本特性………………………………………………….28
4.3 操作條件最佳化分析………………………………………….30
4.3.1 讀取最佳化分析………………………………………...30
4.3.2 編程最佳化分析………………………………………...30
4.4 元件可靠度分析……………………………………………….31
4.5 小結…………………………………………………………….34
第五章 總結…………………………………………………………….50
參考文獻………………………………………………………………...52

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