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作者(中文):李柏昌
作者(外文):Li, Bo-Chang
論文名稱(中文):非晶矽/石墨烯光二極體與MOSFET整合元件研究
論文名稱(外文):Research on Integrating Amorphous silicon/Graphene Photodiode with MOSFET
指導教授(中文):徐永珍
指導教授(外文):Hsu, Yung-Jane
口試委員(中文):郭明清
黃吉成
口試委員(外文):Kuo, Ming-Ching
Huang, Ji-Chen
學位類別:碩士
校院名稱:國立清華大學
系所名稱:電子工程研究所
學號:104063501
出版年(民國):107
畢業學年度:106
語文別:中文
論文頁數:60
中文關鍵詞:石墨烯石墨烯轉移非晶矽光二極體金屬氧化物半導體整合元件
外文關鍵詞:GrapheneGraphene transferAmorphous siliconPhotodiodeMOSFETIntegrated device
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本論文將石墨烯/非晶矽光二極體整合於MOSFET閘極的上方,石墨烯光二極體在不同光強下,會產生相對應的光電壓加諸於閘極上,而改變MOS通道電流的大小,透過偵測通道的電流來偵測光強度。
整個實驗步驟以MOS製程為基礎,並嘗試將石墨烯材料整合於整個製程中,以高溫銅金屬催化方式成長大面積、單層石墨烯,石墨烯會轉移至閘極端上方透過金屬連接至閘極端,並成長非晶矽於石墨烯表面形成石墨烯光二極體,形成石墨烯光二極體與MOSFET整合的感光元件。
從量測結果得到,CVD石墨烯可以整合於CMOS半導體製程中,但整體製程上仍有很大的改善空間,整合而成的石墨烯光偵測器,在不同光強下,有相對應的光電壓變化量。
In this study, the graphene/amorphous silicon photodiode was integrated above the gate of a metal-oxide-semiconductor field effect transistor (MOSFET). The graphene/amorphous silicon photodiode generates corresponding photovoltage on the gate under different intensity of illuminance and causes the modulation of channel current.
The device was fabricated following standard MOS technology process. The experiment tried to integrate the graphene material into MOS semiconductor process. The uniform, monolayer, large area graphene was produced on a copper foil by chemical vapor deposition at high temperature, transferred to the top of the chip, and connected to the gate via metal line. Then the amorphous silicon layer was deposited on graphene to form the photodiode, thus forming the integrated device.
The measurement showed that the CVD graphene could be integrated into CMOS semiconductor process successfully. But the processes still needs improvement. The graphene/amorphous silicon photodiode successfully generated different photovoltage under different illuminance and modulated the channel current.
摘要.......................................................I
Abstract...................................................II
致謝.......................................................III
目錄.......................................................IV
圖目錄.....................................................VI
表目錄.....................................................IX
第一章 前言...............................................1
1.1 石墨烯的發展應用....................................1
1.2 研究動機...........................................3
1.3 論文章節架構........................................4
第二章 石墨烯/N型矽光感元件原理特性.........................5
2.1 石墨烯的基礎特性....................................5
2.1.1 石墨烯的晶格結構....................................5
2.1.2 石墨烯的電子能帶....................................7
2.2 石墨烯拉曼光譜分析..................................9
2.2.1 拉曼散射基本原理....................................9
2.2.2 石墨烯的拉曼光譜...................................10
2.3 石墨烯光偵測器.....................................13
2.3.1 蕭特基接面.........................................13
2.3.2 石墨烯/N型矽蕭特基接面光偵測器.......................16
2.3.3 光偵測器特性參數....................................23
第三章 石墨烯光偵測器實作..................................24
3.1 石墨烯轉移前製程....................................25
3.1.1 形成N井與P井........................................25
3.1.2 閘極製作............................................26
3.1.3 NMOS與PMOS源極/汲極離子佈植..........................27
3.1.4 成長介電層ILD0與接觸窗的形成..........................28
3.2 石墨烯的成長與轉移...................................30
3.2.1 高溫金屬催化成長石墨烯...............................30
3.2.2 感應耦合型電漿化學氣相沉積(ICP CVD)石墨烯.............31
3.2.3 石墨烯支撐層的旋塗與蝕刻銅箔..........................34
3.2.4 轉移石墨烯與移除支撐層...............................34
3.3 石墨烯光偵測器與金屬連線製程..........................38
3.3.1 非晶矽沉積與蝕刻.....................................38
3.3.2 再次成長介電層ILD0與接觸窗的形成......................39
3.3.3 沉積金屬連線.........................................40
第四章 量測結果與討論.......................................43
4.1 量測儀器介紹.........................................43
4.2 元件量測............................................44
4.2.1 元件MOS特性量測.....................................44
4.2.2 石墨烯光偵測器量測..................................47
4.2.3 無石墨烯光二極體整合MOS元件量測......................53
4.2.4 源極隨耦器輸出量測..................................55
4.2.5 響應時間量測........................................56
第五章 結論...............................................58
參考文獻....................................................59
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