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作者(中文):洪偉綸
作者(外文):Hong, Wei-Lun
論文名稱(中文):多壁奈米碳管/碳黑/羰基鐵複合材料之1-18 GHz電磁波吸收特性研究
論文名稱(外文):Electromagnetic Absorption by Multi-walled Carbon Nanotubes/Carbon Black/Carbonyl Iron Composites at 1-18 GHz
指導教授(中文):徐文光
指導教授(外文):Hsu, Wen-Kuang
口試委員(中文):戴念華
蕭耀貴
學位類別:碩士
校院名稱:國立清華大學
系所名稱:材料科學工程學系
學號:104031701
出版年(民國):106
畢業學年度:105
語文別:中文
論文頁數:85
中文關鍵詞:電磁波屏蔽奈米碳管碳黑羰基鐵
外文關鍵詞:electromagnetic shieldingcarbon nanotubescarbon blackcarbonyl iron
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本研究探討多壁奈米碳管(multi-walled carbon nanotubes, MWCNTs)、碳黑(carbon black, CB)、羰基鐵(carbonyl iron, CI)加入環氧樹脂(epoxy)所形成之複合材料的電性,以美國海軍實驗室所發展的NRL arch method進行電磁波吸收性能量測,研究各種成份組合在1-18 GHz的電磁波吸收特性,並利用向量網路分析儀量測介電係數、導磁率、阻抗等材料電磁特性參數,以分析其電磁波吸收機制。多壁奈米碳管及碳黑對電磁波遮蔽的貢獻主要來自介電損耗及電阻損耗,而羰基鐵的貢獻則主要來自磁損耗,因此可藉由將三者以各種不同的比例、成份混合,改變電磁波最大反射損耗的大小及出現的波段。
The electromagnetic absorption of composites made from epoxy, multi-walled carbon nanotubes (MWCNTs), carbon black (CB), and carbonyl iron (CI) is measured with NRL arch method at 1-18 GHz. The per¬mittivity, permeability, and impedance known to control absorption mechanism are also uncovered by vector network analyzer. The dielectric and resistive losses are verified arising from multi-walled carbon nanotubes and carbon black while car-bonyl iron contributes magnetic loss to wave absorption. The magnitude and frequency of maximum reflection loss can be tuned by changing ratio of epoxy to additives.
摘要 I
Abstract II
致謝 III
目錄 IV
圖目錄 VI
表目錄 X
第一章 文獻回顧 1
1.1電磁波吸收材料種類 1
1.1.1介電損耗型材料 1
1.1.2磁損耗型材料 4
1.1.3電阻損耗型材料 4
1.2奈米碳管簡介 5
1.2.1奈米碳管結構 5
1.2.2奈米碳管電性 7
1.2.3奈米碳管合成方式 10
1.2.3.1電弧放電法 10
1.2.3.2雷射蒸發法 11
1.2.3.3碳氫化合物之金屬催化熱烈解法 12
1.3碳黑簡介 13
1.4羰基鐵簡介 15
1.5電磁波屏蔽理論 17
1.5.1反射損耗 18
1.5.2吸收損耗 19
1.5.3多重反射損耗 20
1.5.4干涉型損耗 20
1.5.5電磁波屏蔽效率 21
第二章 研究動機 23
第三章 實驗步驟與原理 25
3.1藥品與儀器 25
3.1.1藥品與耗材 25
3.1.2製程設備與量測儀器 26
3.2實驗流程 27
3.3實驗步驟 28
3.3.1 MWCNTs/CB/CI/Epoxy複合材料之製備 28
3.3.2掃描式電子顯微鏡分析(SEM) 31
3.3.3電性量測 32
3.3.4電磁特性參數量測 33
3.3.5電磁波吸收性能量測 33
第四章 結果與討論 36
4.1掃描式電子顯微鏡影像(SEM) 36
4.2 X射線能量散布分析儀(EDX) 39
4.3電性量測 41
4.4電磁特性參數量測 45
4.4.1介質係數實部 45
4.4.2介質係數虛部 48
4.4.3介電損耗正切 50
4.4.4導磁率實部 53
4.4.5導磁率虛部 55
4.4.6磁損耗正切 58
4.4.7本質阻抗 61
4.5反射損耗量測 64
4.5.1樣品厚度與反射損耗之關係 64
4.5.2 MWCNTs/CB/CI濃度與反射損耗之關係 71
4.5.3電磁波入射角與反射損耗之關係 76
第五章 結論 79
參考文獻 82

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