自1873年以來，科學家們發現硒（Se）是光電探測器的潛在候選者之一，由於其具有高光導率（〜8×104 S cm -1）、在壓電性、熱電性以及非線性光學響應等各個方面都有出色的表現。至今，大多數生產硒的途徑為溶液相合成法。溶液相合成法有著無法避免的缺點，像是污染問題以及會降低其電性表現。因此，開發一種簡單、省時又對環境友善的製程法是值得被探討的。
在本研究中，我們利用電漿輔助硒沉積法，製成硒元件。本方法提供簡單、快速又直接等優點。利用不同電漿瓦數輔助，可以將硒從薄膜結構到線/膜的異質結構，相關的機制探討亦會在本研究中探討。其線的態歸因於熱處理期間的表面起伏有關，高表面能區域扮演了成核點的腳色。此外，在硒和二氧化矽（SiO2）/矽（Si）的襯底之間插入銦（In）層通過機械互鎖和吸附理論強烈地增強了其在穿戴設備應用性。值得一提的是，我們實現在低溫製成硒光電探測器於PET基板上。其光電探測器具有從405nm到638nm的可見光檢測能力、極低暗電流（〜0.03nA）、高開/關比（〜700）以及快速響應時間（小於25ms）等表現能力，且具有極高的靈活性，良好的彎曲耐久性和高的電氣穩定性，從上述能力表現，證明我們製成的硒光電探測器非常適用於可佩戴的光電元件的相關應用。

Since 1873, scientists discovered that selenium (Se) is one of potential candidates as photodetector owing to its outstanding properties of various aspects such as high photoconductivity (~8x104 S cm-1), piezoelectricity, thermoelectricity and nonlinear optical responses. Solution phase synthesis become the efficient way to produce selenium. However, contamination issue should be taken into account, deteriorating the electric characteristic of Se. Therefore, a simple, time-saving and environmentally friendly synthesis process is required to be found.
In this work, a plasma-assisted selenization process has been proposed to simply, fast and directly grow Se thin film toward Se wire/film microstructures. The detailed formation mechanisms were investigated. The wire morphology was attributed to the generation of defects during heat treatment. Also, insertion of indium (In) layer between Se and SiO2/Si substrate strongly enhanced the mechanical strength for future wearable devices applications via mechanical interlocking and adsorption theory. The direct growth of Se microstructures on PET substrate using plasma assisted chemical vapor reaction instrument at low temperature were achieved. In addition, Se-based semiconductor photodetector exhibit visible detection from 405 nm to 638 nm, low dark current (~0.03nA), high on/off ratio (~700) and fast response time (smaller than 25ms), indicating a great potential to the wearable optoelectronic applications. Owing to the Se-based semiconductor photodetector display extreme flexibility, good bending endurance, high electrical stability and air stability on the PET substrate.

Abstract (English) I
Abstract (Chinese) II
Acknowledgements III
Table of content IV
List of Figures VI
List of Tables IX
Acronyms X
Chapter 1 Introduction - 1 -
1.1 Preface - 1 -
1.2 Motivations - 2 -
Chapter 2 Background and Literature Reviews - 3 -
2.1 Introduction to Selenium - 3 -
2.1.1 Structure of selenium - 3 -
2.1.2 Practical application based on Selenium - 5 -
2.2 Optoelectronic devices - 10 -
2.2.1 Structure of MSM photodetector - 11 -
2.2.2 Ohmic Contacts vs. Schottky Contacts - 12 -
2.2.3 Sensing Mechanisms : Photoconductive Effect - 14 -
2.2.4 Performance Parameters - 15 -
Chapter 3 Experimental and Analytical Instruments - 19 -
3.1 Fabrication processes - 19 -
3.1.1 Sputter - 19 -
3.1.2 Selenization furnace - 20 -
3.2 Analysis Instrument - 20 -
3.2.1 Field-emission scanning electron microscopy (SEM) - 20 -
3.2.2 Atomic Force Microscope (AFM) - 21 -
3.2.3 Raman spectrum analysis - 22 -
3.2.4 X-Ray Diffraction (XRD) - 23 -
3.2.5 Photoelectric Measurements system - 24 -
Chapter 4 Experimental Process - 25 -
4.1 Preparation of Se/In structures - 25 -
4.2 Device fabrication process - 26 -
4.3 Characterization - 27 -
Chapter 5 Results and Discussion - 28 -
5.1 Characterization of Se/In structure - 28 -
5.1.1 Raman spectrum analysis - 28 -
5.1.2 X-ray diffraction analysis - 28 -
5.2 Parameter Optimization - 30 -
5.2.1 Importance of Indium layer - 30 -
5.2.2 Influence of plasma power - 33 -
5.2.3 Growth mechanism - 35 -
5.2.4 Influence of substrate heating rate - 37 -
5.2.5 Influence of the time of the holding temperature - 38 -
5.3 Optoelectronic performance of the Se / In photodetector - 40 -
5.3.1 Optoelectronic performance optimization - 40 -
5.3.2 Optoelectronic properties of wearable device - 44 -
Chapter 6 Conclusions - 49 -
Chapter 7 Future work - 50 -
References - 51 -

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