拓樸絕緣體(Topological Insulatros)在當今在表面科學中，是非常熱門的二維材料，它在大氣之中，是個很脆弱，且容易被氧化的物質。所以，分子束磊晶(Molecular beam epitaxy, MBE)長成拓樸絕緣體後，再一層保護帽層(Capping Layer)是必須的。在本篇論文中，會著重於我們如何保存樣品，和如何在掃描穿隧顯微鏡的真空腔體完整脫帽(Decapping)拓樸絕緣體。脫帽需要控制加熱的能量及溫度，我同時設計了一個小程式來控制電源供應器。
因為分子的彈性、可調變的結構和半導體姓，分子電子學受到越來越多的關注，甚至也被用來當作場效電晶體(Field effect transistor)的材料。它的便宜價格和自組性質吸引了很多團隊在研究。我會在接下來的論文內容中介紹紫質分子(Porphyrin)和[10]苯烯菲([10]Phenacene)的性質。

Topological insulators(TIs) is a famous 2-D material in surface science. It is a fragile material which easily oxides in air. A capping layer to protect the topological insulator after the molecular beam epitaxy(MBE) growth is necessary. This thesis focus on the decapping procedure to identify a reliable method. Decapping needs to control the power and the heating time. I have designed a program to control respective power supply.

Molecular electronics received increasing attention because its flexibility. adjustable structure, and semi-conductivity. It also can be used as a material to make field-effect transistors. Its cheap price and its self-assembly property are motivate many to investigate it. In this thesis, I introduce the property of substituted PAL025 and [10]phenacene.

1 Introduction 3
2 Theory 5
2.1 1-D Quantum tunneling 5
2.2 Tunneling Current 6
2.3 Scanning Tunneling Spectroscopy 6
3 Instruments 8
3.1 Ultra High Vacuum 9
3.1.1 Rotary Pump 9
3.1.2 Turbomolecular Pump 10
3.1.3 Titanium Sublimation Pump and Ion Pump 10
3.1.4 Ion Gauge 11
3.2 Sputtering 12
3.3 Evaporator 13
3.4 Chamber 14
3.4.1 Load-Lock Chamber 15
3.4.2 Preparation Chamber 15
3.4.3 STM Chamber 16
4 STM System Repairing and Improving 18
4.1 Overview Of STM 18
4.2 Sample Holder 18
4.3 Preparation Chamber Repair 21
4.4 STM Chamber Repair 22
4.4.1 Piezo Fixing 22
4.4.2 Tunneling Current Cable 26
5 Result 28
5.1 Topological Insulator 28
5.1.1 Molecular Beam Epitaxy Growth of Topological Insulator 29
5.1.2 Decapping Process 29
5.1.3 Decapping with Sputtering 32
5.2 Porphyrin 37
5.2.1 PAL025 Molecules 37
5.2.2 Overview Of PAL025 38
5.2.3 Second Layer PAL025 40
5.2.4 Dierent Phases 43
5.2.5 Dierent Annealing Temperature 44
5.3 [10]Phenacene 47
5.3.1 Au(111) 48
5.3.2 Ag(111) 48
6 Program Design 51
6.1 Power Supply 51
6.2 Labview Program 52
7 Summary 55
A Topological Annealing Procedure 56
Reference 60

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