二維材料(2D-material)被認為有機會能取代矽(Si)，成為新的半導體材料。除了常見的石墨烯(Graphene)、黑磷(Black phosphorus)和過渡金屬二硫族化物(Transition metal dichalcogenide, TMDCs)之外，三六族化合物半導體最近也被拿出來廣泛研究。其中三硒化二銦(In2Se3)是一種n型半導體材料，在單層時具有1.48 eV的直接能隙，隨著厚度增加能隙會減少，塊材為1.3 eV直接能隙，在不同厚度下皆為直接能隙，可用於製作高效能的光電元件；而能隙大小剛好等於紅外光能量，能偵測光的範圍可由紫外光到紅外光。論文中探討了電子束與氧化反應對In2Se3的影響，可以得知使用電子束微影會造成In2Se3的破壞，使接觸電阻變高，進而影響元件的特性，而In2Se3的氧化反性發生非常快速，並InOx對In2Se3具有p摻雜。文中製作出的背閘極元件中，層數為10層時電子遷移率在室溫下(T = 298K)最高可到達388 cm2/Vs，低溫情況下可提升至455 cm2/Vs。經由光電量測，可以得知不同光波長，產生光電流大小依序為：365 nm (3.40 eV) > 530 nm (2.34 eV) > 455 nm (2.73 eV) > 635 nm (1.95 eV) > 740 nm (1.68 eV) > 850 nm (1.46 eV)；在光波長為530 nm時，在光強P = 303 μW/cm2最大光響應與量子效應可11981 A/W與28036，光響應時間在Vgs = -40 V最短可為600 ms。

Group III-VI compound semiconductors are one class of important 2D-materials. The most intensively studied group III–VI material with M2X3 stoichiometry is In2Se3. Bulk In2Se3 is a typical n-type semiconductor with a direct band gap of 1.3 eV. The direct band gap of monolayer In2Se3 is about 1.48 eV. The In2Se3 flake photodetectors were broad spectra responsive from UV-visible to near infrared. In this thesis, we discuss the effect of e-beam and oxidation on In2Se3. E-beam can create defects on In2Se3, so that contact resistance rises after e-beam lithography. Oxidation reaction of In2Se3 is very fast, and InOx is p-doping to In2Se3. For In2Se3 FET, the electron mobility is up to 388 cm2/Vs at room temperature (T = 298K) for layer thickness about 10 layers. Mobility rises to 455 cm2/Vs with decrease temperature (T = 78K). For the result of illuminated measurement, we arranged the photocurrent in decreasing order: 365 nm (3.40 eV)> 530 nm (2.34 eV)> 455 nm (2.73 eV) > 635 nm (1.95 eV) > 740 nm (1.68 eV)> 850 nm (1.46 eV). In2Se3 FET have a high response to visible light, exhibiting a photoresponsivity of 11981 A/W at 530 nm with a quantum efficiency greater than 28036. Response time is 600 ms at Vgs = -40 V.

Abstract............................................................................................................... I
論文摘要............................................................................................................. III
目錄.................................................................................................................. VI
第一章 序論....................................................................................................... 1
1.1 半導體的發展. . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.2 半導體微縮的極限 . . . . . . . . . . . . . . . . . . . . . . . . . 4
1.3 半導體光電元件 . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1.3.1 光偵測器 . . . . . . . . . . . . . . . . . . . . . . . . . . 7
1.3.2 光導體. . . . . . . . . . . . . . . . . . . . . . . . . . . 9
1.4 論文結構 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
第二章 二維材料介紹....................................................................................... 13
2.1 二維材料的展展 . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2.2 三六族化合物半導體. . . . . . . . . . . . . . . . . . . . . . . 15
第三章 三硒化二銦材料分析........................................................................... 21
3.1 三硒化二銦合成與製備 . . . . . . . . . . . . . . . . . . . . . . 21
3.2 拉曼光譜檢測. . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3.3 光致螢光光譜檢測. . . . . . . . . . . . . . . . . . . . . . . . . 26
3.4 銦-硒-氧三相圖 . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
3.4.1 X 射線光電子能譜學. . . . . . . . . . . . . . . . . . . 29
第四章 三硒化二銦場效電晶體製作............................................................... 33
4.1 場效電晶體製作與微縮 . . . . . . . . . . . . . . . . . . . . . . 33
4.1.1 金屬遮罩 . . . . . . . . . . . . . . . . . . . . . . . . . . 33
4.1.2 電子束蒸鍍機 . . . . . . . . . . . . . . . . . . . . . . . 34
4.1.3 電子束微影 . . . . . . . . . . . . . . . . . . . . . . . . 35
4.1.4 原子力顯微鏡 . . . . . . . . . . . . . . . . . . . . . . . 37
4.2 三硒化二銦氧化物形成 . . . . . . . . . . . . . . . . . . . . . . 39
4.2.1 反應式離子蝕刻機 . . . . . . . . . . . . . . . . . . . . 39
4.2.2 氧化物形成方式 . . . . . . . . . . . . . . . . . . . . . . 41
第五章 三硒化二銦場效電晶體量測與特性分析........................................... 43
5.1 三硒化二銦場效電晶體變溫量測. . . . . . . . . . . . . . . . . 44
5.2 三硒化二銦氧化對電晶體影響 . . . . . . . . . . . . . . . . . . 53
5.3 三硒化二銦場效電晶體光電量測. . . . . . . . . . . . . . . . . 57
第六章 結論與未來展望................................................................................... 65
參考文獻............................................................................................................. 67

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