本文旨在分析氣相鍺於砷化鎵基板內的擴散行為模式，並期望將其應用於雜質致失序以達成利用量子井混合技術製作高功率半導體雷射元件中之非吸收鏡面，藉此改善元件在高輸出功率下的過熱現象。
文中利用封管技術達成鍺擴散所需的真空環境，並使用三種鍺擴散源來進行鍺擴散實驗，分別是不同面積，事先將5N-GeAs粉末沉積在半絕緣砷化鎵基板上的鍺前驅物基板，以及直接使用GeAs粉末作為鍺來源，並在擴散過程中加入額外的砷以增加擴散速率，試片將會在一系列的溫度與時間下退火，再觀察擴散圖形。
SEM分析結果得知三種鍺擴散源皆成功在p型砷化鎵基板內擴散，並遵守著特定的擴散模式，文中將更進一步透過Fick's law所推導的各種關係式來計算擴散係數與活化能。最後SIMS的量測分析結果也確認了擴散圖形即為鍺原子成功擴散所造成，並透過深度與原子分佈等資訊展現了相當良好的結果。

In this study, we analyze diffusion models of vapor-phase Ge in GaAs and apply it to impurity induced layer disordering (IILD). Quantum well intermixing (QWI) will be achieved to fabricate non-absorbing mirrors (NAMs) for the purpose of ameliorating catastrophic optical damage (COD) of high power semiconductor laser devices.
We employ ampoule sealing technique to keep environment under high vacuum. Three different kinds of Ge source are used to conduct Ge diffusion experiment, including two different areas of precursor, which are GeAs-deposited S.I.-GaAs substrates, and GeAs powder. Samples will be annealed at different times and temperatures. Excessive As4 will be added to increase diffusion rate. After Annealing, samples will be analyzed by SEM and SIMS and diffusion depth will be found out.
SEM images showed that all Ge sources diffused successfully in p-type GaAs substrates and followed specific models. In addition, diffusion coefficient and activation energy were calculated by utilizing relationship derived from Fick’s law of diffusion. Finally, SIMS profiles also indicated that diffused region shown in SEM images were actually caused by diffused Ge atoms and therefore SIMS profiles provided a lot of useful information.

Abstract............................................................ I
論文摘要........................................................... III
目錄................................................................ VI
第一章 序論......................................................... 1
1.1 半導體雷射的歷史發展. . . . . . . . . . . . . . . . . . . . . . . 1
1.2 災難性光學損傷 (Catastrophic optical damage, COD) . . . . . . . . 2
1.3 雜質致失序. . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
1.4 論文結構 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
第二章 原理與發展.................................................... 9
2.1 III 族原子在 III-V 族分子晶格中的自擴散機制 . . . . . . . . . . . 9
2.2 砷蒸氣壓對自擴散速率的影響 . . . . . . . . . . . . . . . . . . . 9
2.3 雜質濃度對自擴散速率的影響 . . . . . . . . . . . . . . . . . . . 12
2.4 雜質擴散機制 . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2.4.1 矽擴散 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2.4.2 鍺擴散 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
2.5 擴散係數與活化能 . . . . . . . . . . . . . . . . . . . . . . . . 22
第三章 實驗設計與流程............................................... 29
3.1 實驗設計. . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
3.2 封管技術 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
3.3 製備鍺前驅物 . . . . . . . . . . . . . . . . . . . . . . . . . . 31
3.4 擴散用試片 . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
3.5 鍺擴散實驗（以鍺前驅物基板與砷作為擴散源） . . . . . . . . . . . 35
3.6 鍺擴散實驗（以砷化鍺粉末、鎵金屬與砷作為擴散源） . . . . . . . . 37
3.7 實驗分析儀器 . . . . . . . . . . . . . . . . . . . . . . . . . . 38
3.7.1 掃描式電子顯微鏡 . . . . . . . . . . . . . . . . . . . . . . . 39
3.7.2 二次離子質譜儀 . . . . . . . . . . . . . . . . . . . . . . . . 40
第四章 實驗結果與討論............................................... 43
4.1 擴散完試片處理. . . . . . . . . . . . . . . . . . . . . . . . . 43
4.2 鍺擴散結果分析 . . . . . . . . . . . . . . . . . . . . . . . . . 43
4.2.1 以鍺前驅物基板 25 mm2 與砷作為擴散源 . . . . . . . . . . . . . 44
4.2.2 以鍺前驅物基板 50 mm2 與砷作為擴散源 . . . . . . . . . . . . . 49
4.2.3 以砷化鍺粉末、鎵金屬與砷作為擴散源 . . . . . . . . . . . . . . 53
4.3 擴散係數與活化能計算 . . . . . . . . . . . . . . . . . . . . . . 58
4.4 二次離子質譜儀分析鍺擴散後試片原子分佈 . . . . . . . . . . . . . 61
第五章 結論與未來展望............................................... 67
參考文獻............................................................ 69

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