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作者(中文):謝頌恩
作者(外文):Hsieh, Sung-En
論文名稱(中文):適用於物聯網之超高能源效率之高解析度類比數位轉換器
論文名稱(外文):High Resolution ADC with Ultra-High Power Efficiency for IoT Application
指導教授(中文):謝志成
指導教授(外文):Hsieh, Chih-Cheng
口試委員(中文):張順志
李泰成
洪浩喬
許雲翔
謝秉璇
陳信樹
黃柏鈞
口試委員(外文):Chang, Soon-Jyh
Lee, Tai-Cheng
Hong, Hao-Chiao
Shu, Yun-Shiang
Hsieh, Ping-Hsuan
Chen, Hsin-Shu
Huang, Po-Chiun
學位類別:博士
校院名稱:國立清華大學
系所名稱:電機工程學系
學號:103061902
出版年(民國):107
畢業學年度:107
語文別:英文
論文頁數:152
中文關鍵詞:低電壓低功耗高解析度連續漸進式類比數位轉換器積分微分調變器
外文關鍵詞:low voltagelow powerhigh resolutionSAR ADCSDM
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在物連網的應用蓬勃發展下,為了達到更智慧化的系統及社會,無所不在的感知層和大量無線感測節點是無可避免的,但是大量的無線感測節點,會造成整體系統功耗過大。因此,本論文提出了三種低功耗的類比數位轉換器,提供環境能量擷取的可能性。
本論文第一個提出的電路為操作在0.3伏十位元的連續漸進式類比數位轉換器。在現今的連續漸進式類比數位轉換器的實現上,往往數位電路的硬體功耗會是最大的負擔,利用提出的電容陣列切法,在數位電路的實作上將都會是單端操作,降低其中節點所需要的充放電次數,以降低數位功耗。此轉換器在台積電90奈米製造,取樣頻率為每秒二十五萬次取樣,有效位元數8.21位元,整體換算的性能表現為0.705 fJ/conversion-step.
本論文的第二個晶片設計為操作低壓0.3伏的連續漸進式類比數位轉換器。在上個晶片的實作中發現,在超低壓的設計下,雜訊的干擾就會顯得惡化,造成無法有效提升有效位元數,所以此架構在比較器上提出了低功耗、低雜訊的做法,也在切換方法有所改良,達到更高的輸入訊號範圍,以降低整體系統雜訊。此晶片使用台積電90奈米製造,取樣頻率為每秒六十萬次取樣,有效位元數為9.46位元,整體換算性能表現為0.44 fJ/conversion-step。
本論文的第三個晶片設計提出混和式的類比數位轉換器,前端為連續漸進式類比數位轉換器,後端為Sigma-delta modulator。根據過往的研究,發現如果想要再進一步提升解析度,電容陣列的準度需要提升,以提升系統線性度,並且必須採用sigma-delta modulator之架構來有效壓抑熱雜訊。第三個晶片設計因此提出提升線性度之電容陣列切換方式,和使用了sigma-delta modulator降低雜訊。此晶片使用台積電90奈米製造,取樣頻率為每秒二十七萬次取樣,有效位元數為11.93位元,整體換算性能表現為0.606 fJ/conversion-step。
With the extensive growing of Internet-of-Things (IoT), in order to achieve the function of smart grids, densely existing sensing nodes and ubiquitous devices become inevitable. While the existence of sensing nodes grows exponentially, dramatically increased power consumption becomes unbearable. To address this problem, this paper proposes three ultra-low power analog to digital converters which provide possibilities for an energy harvesting technique.
The first architecture is a 0.3 V 10-bit successive approximation register analog-to-digital converter. With advanced switching procedures and efficient analog techniques, digital circuit’s power consumption becomes the dominant factor for the overall system’s power efficiency. With the proposed switching procedure, the realization of digital circuits is single-ended, which reduces dynamic power consumption (CV2) of internal nodes. This chip is fabricated under the TSMC 90 nm technology. The sampling rate is 250 kSamples/second. The effective number of bit is 8.21 bits. The Walden’s FoM is 0.705 fJ/conversion-step.
The second architecture is still a 0.3 V successive approximation register analog-to-digital converter. From the experience of the previous implementation, ADC suffers from thermal noise due to the decreasing VLSB from a shrinking supply voltage. Therefore, this work proposes a low noise comparator. With proposed input range boosting switching procedure, the full input range is doubled, which results in suppressed thermal noise. This chip is fabricated under the TSMC 90 nm technology. The sampling rate is 600 kSamples/second. The effective number of bit is 9.46 bits. The Walden’s FoM is 0.44 fJ/conversion-step.
The last implementation is a hybrid analog-to-digital converter, it uses a successive approximation register analog-to-digital converter and Sigma-delta modulator as coarse and fine ADCs, respectively. From the previous study, the matching performance of the capacitor array must be improved. Furthermore, the Sigma-delta modulator must be adopted to suppress thermal noise. This work proposes a switching procedure which increases the linearity. Furthermore, a sigma-delta modulator is implemented. This chip is fabricated under the TSMC 90 nm technology. The sampling rate is 270 kSamples/second. The effective number of bit is 11.93 bits. The Walden’s FoM is 0.606 fJ/conversion-step.
CONTENTS
ABSTRACT III
CONTENTS VII
LIST OF FIGURES XII
LIST OF TABLES XVIII
CHAPTER 1 INTRODUCTION 1
1.1 MOTIVATION 1
1.2 THESIS ORGANIZATION 3
CHAPTER 2 FUNDAMENTALS OF ADC 5
2.1 NYQUIST THEOREM 5
2.2 RESOLUTION 6
2.3 OFFSET ERROR 6
2.4 GAIN ERROR 7
2.5 QUANTIZATION ERROR 8
2.6 SIGNAL-TO-NOISE RATIO (SNR) AND EFFECTIVE NUMBER OF BITS (ENOB) 10
2.7 SIGNAL-TO-NOISE AND DISTORTION RATIO (SNDR) 11
2.8 EFFECTIVE NUMBER OF BITS (ENOB) 11
2.9 DIFFERENTIAL NONLINEARITY (DNL) 12
2.10 INTEGRAL NONLINEARITY (INL) 13
2.11 SPURIOUS-FREE DYNAMIC RANGE (SFDR) 14
2.12 FIGURE OF MERIT (FOM) 14
CHAPTER 3 OVERVIEW OF ADCS 16
3.1 TOP-LEVEL DISCUSSIONS 16
3.1.1 SAR ADC 16
3.1.2 Sigma-Delta Modulator (DSM or SDM) 18
3.1.3 Incremental Sigma-Delta Modulator (ISDM) 21
3.2 SAMPLE AND HOLD (S/H) CIRCUITS 23
3.2.1 Sampling Speed 23
3.2.2 Signal Dependent Resistance 24
3.2.3 Charge Injection 25
3.2.4 Clock Feedthrough 26
3.3 DIGITAL-TO-ANALOG CONVERTER WITH THE CAPACITIVE ARRAY 27
3.3.1 Parasitic Capacitance 29
3.3.2 Mismatch 29
3.3.3 kT/C noise 30
3.4 COMPARATOR 30
3.4.1 Input-referred offset 32
3.5 SUMMARY 32
CHAPTER 4 CHALLENGES OF ULTRA-LOW VOLTAGE OPERATIONS 34
4.1 DIGITAL CIRCUIT 35
4.2 SAMPLE AND HOLD 39
4.3 COMPARATOR 42
4.4 CDAC 45
4.5 SUMMARY 47
CHAPTER 5 A 0.3V 0.705FJ/CONVERSION-STEP 10-BIT SAR ADC WITH SHIFTED MONOTONIC SWITCHING PROCEDURE IN 90NM CMOS 50
5.1 INTRODUCTION 50
5.2 PROPOSED ADC ARCHITECTURE 53
5.2.1 Shifted Monotonic switching procedure (SMS) 54
5.2.2 Dynamic comparator offset 58
5.2.3 Noise Performance 60
5.2.4 Redundancy implementation 63
5.3 CIRCUITS IMPLEMENTATION 64
5.3.1 Body driven switches 64
5.3.2 Layout implementation of CDAC 65
5.4 MEASUREMENT RESULT 66
5.5 SUMMARY 69
CHAPTER 6 A 0.44 FJ/CONVERSION-STEP 11B 600 KS/S SAR ADC WITH SEMI-RESTING DAC 71
6.1 INTRODUCTION 72
6.2 PROPOSED SAR ADC ARCHITECTURE 76
6.2.1 Semi-resting (SR) Switching Procedure 78
6.2.2 Digital Foreground Calibration 80
6.2.3 Switching energy 82
6.2.4 Nonlinearity 86
6.3 IMPLEMENTATION OF KEY BUILDING BLOCKS 88
6.3.1 Double-Bootstrapped Sample-and-Hold 88
6.3.2 Cascade-Input Comparator 90
6.3.3 Capacitor Array Arrangement 94
6.4 MEASUREMENT RESULTS 96
6.5 SUMMARY 101
CHAPTER 7 A 0.4V 13-BIT 270KS/S SAR-ISDM ADC WITH OPAMP-LESS TIME-DOMAIN INTEGRATOR 104
7.1 INTRODUCTION 105
7.2 PROPOSED SAR ADC ARCHITECTURE 107
7.2.1 Proposed SAR ADC Architecture 111
7.2.2 Switching Energy and Specification of Reference Buffer 114
7.2.3 Nonlinearity 116
7.3 IMPLEMENTATION OF KEY BUILDING BLOCKS 118
7.3.1 Voltage-Controlled Delay Line (VCDL) and ISDM 118
7.3.2 Non Ideal Effects of VCDL for the ISDM Operation 125
7.3.3 Vcm Sensitivity of INLS Switching Procedure 126
7.3.4 Capacitor Array Arrangement 128
7.3.5 Detailed Arrangements of Redundancy 128
7.4 MEASUREMENT RESULTS 130
7.5 SUMMARY 134
CHAPTER 8 CONCLUSIONS OF LOW-V OPERATIONS AND FUTURE WORKS 137
8.1 STATE-OF-THE-ART WORKS 137
8.2 PROPOSED WORKS 141
8.3 FUTURE WORK 142
PUBLICATION LIST 144
JOURNAL 144
CONFERENCE 144
BIBLIOGRAPHY 146

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