本研究運用國家晶片中心所提供之TSMC 0.18 m 1P6M標準CMOS製程平台實現高性能之電容感測晶片。透過充分利用此平台標準且成熟的半導體技術達成批量製造、系統整合與自由度高的多層繞線，提升整體之附加價值。而微機械共振器的部分，我們嘗試挑戰CMOS 0.18 µm製程中最小的側壁間隙製作，並成功實現出等效換能間隙為580 nm之雙鉗樑微機械共振器，更將製程良率調整至百分百的極佳狀態。
本次研究中提出機翼型雙鉗音叉式(Wing-Extended Type Dual Ended Tuning Fork, W-DETF)微機電共振器的研發，透過提高結構剛性、拓展傳感面積、並以差動機制提高至整體雜訊模態與背景雜訊準位；以設計層面來說，就是能使元件擁有高功率負載、低運動阻抗與高拒帶響應。從量測結果得知其振盪頻率於共振器直流偏壓為30 V的條件下為1.11 MHz、共振點的相位約為0度、拒帶響應(S.B.R.J.)大於25 dB、負載品質因素(Loaded Quality Factor)為2294.1，而其運動阻抗(Rm)約略為250.6552 KΩ，該元件具有高抑制雜訊模態和耦合電容成效，系統的功率負載能力提升至Pna=-5.0 dBm與Pin =-33.6 dBm。另外，透過儀器級的鎖像放大器測量其振盪後的相位雜訊分別為-79 dBc/Hz @ 1-kHz與-104 dBc/Hz @ 100-kHz，系統的艾倫偏差值則為100ppb。此優異的諧振器與振盪器的表現，我們期待此技術未來能引入更多功能與應用。

This work utilized the CIC/TSMC 0.18 m CMOS platform to realize High Performance CMOS-MEMS Resonators and Oscillators.
A mature CMOS-MEMS platform was used to realize a monolithic sensor system which features mass production, routing flexibility, and inherent MEMS/IC integration. Such advantages might benefit various high-value added products. The design of this work tried to exceed the limitation of CMOS-MEMS capacitive micromechanical resonators, including minimize the In- plane gap (0.38 m) and yields almost 100% achieved.
A Wing-Extended Type Dual Ended Tuning Fork (W-DETF) was provided in this work and achieved the High Power Handling, Low Motion Impedance, and High Stopband Rejection through enhancing the mechanical stiffness, optimizing the transducer area, and differential excitation architecture. A high performance capacitive resonator design was fabricated and characterized with nature frequency of 1.11MHz, perfect phase change around 0˚, Quality Factor around 2294.1, S.B.R.J. up to 25 dB, and motional impedance of 250 kΩ. The resonator achieves a higher spurious mode suppressing, feedthrough cancellation, more linear operation and Power handling of Pna =-5.0 dBm, Pin= -33.6 dBm.
The measured phase noise with Lock-in Amplifier was -79 dBc/Hz at 1-kHz offset and -104 dBc/Hz at 100-kHz offset, respectively. Thanks to the Low-Rm, High power handling, High-Q resonator design, the Closed-in & Far-from-Carrier phase noise was substantially reduced and was implemented an extremely low minimal bias instability of 100 ppb.
This technology developed in the work might bring more benefits towards Sensor System on Chip (S-SoC) in the future.

目錄 I
圖目錄 III
表目錄 VI
摘要 VII
ABSTRACT VIII
誌謝 IX
第一章 前言 1
1-1 研究動機 1
1-2 時空背景 7
1-3 文獻回顧 12
1-4 論文架構 16
第二章 理論模型建置與分析 18
2-1 電容式機械共振器-理論模型建立 20
2-2 電容式機械共振器-機械模型建立 22
2-3 電容式機械共振器-等效電路模型 24
2-4 有限元素模擬分析 31
第三章 電容式機械共振器-設計考量與實現 33
3-1 換能效率最佳化設計 36
3-2 高剛性結構補償設計 40
第四章 先進製程設計與結果探討 42
4-1 CMOS 0.18 m 1P6M 標準製程 43
4-2 CMOS-MEMS元件製程設計 44
4-3 製程瓶頸與解決方法 48
第五章 量測結果與性能驗證 49
5-1 開迴路共振器特性量測 50
5-1-1 深次微米間隙特性驗證 53
5-1-2 高功率負載性驗證 60
5-1-3 雜散效應抑制驗證 63
5-1-4 頻率穩定性驗證 65
5-2 微機械振盪器特性量測 68
第六章 結論與未來研究 70
參考文獻 72

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