隨著電子元件技術的蓬勃發展及通訊科技的進步，萬物聯網從遙不可及到如今指日可待，而伴隨著物聯網的實現，便宜多樣的感測器需求成為橫亙眼前的一大問題，於是，在奈米尺度下展現多樣新奇特性的奈米線元件成為極具潛力的解決之道，此外，許多研究發現異質結構材料能夠展現優於原始材料的光電特性，因此硒化鋅(ZnSe)結合氧化鋅(ZnO)的異質枝狀奈米線在不同波段光源下的光感測特性為此研究的主要探討目標，在研究中首先探討了硒化鋅-氧化鋅異質枝狀奈米線的成長機制及材料結構分析，並成功發展出穩定可控制的枝狀奈米線結構成長技術，而對於光感測特性的研究，則選擇了結合銀奈米線電極來製作全奈米線的可繞式光感測器，並依序測量了不同氧化鋅比例下的異質奈米線感光元件特性，結果發現在在結合不同長度的枝狀氧化鋅後，硒化鋅-氧化鋅展現了截然不同的光感測特性，特別是對於原先不吸收的綠光和紅光分別有了3835 % 和 798 %的顯著光反應提升，總結來說，本研究成功地藉由調整異質材料比例來調控並提升了材料感光特性，為未來材料研究提供了一個嶄新方向。

Heterostructure nanowires, with numerous novel properties superior to their pristine states, play important roles as both active and passive units in electronic devices. Owing to the booming demand of sensors in IoT applications, devices with low production cost and well designability become the criteria of next generation detector. For this reason, producing sensors by nanowires printing is a promising way to achieve this goal and have attracted great attentions.
The aim of this work attempts to explore the distinctive properties of ZnSe-ZnO heterostructure nanowires and use silver nanowires as conducting electrode to form the all-nanowire flexible device. In this research, we first provide a briefly literature survey about ZnSe, ZnO and Ag nanowires, including growth mechanism and applications. Nanowire growth processes and all-nanowire device fabrication procedures are then presented in the next sections. Last, the detailed material characterizations and photoresponse analysis of pure ZnSe nanowires and ZnSe-ZnO heterostructure nanowires with different lengths of ZnO branches were further discussed.
Results of this study suggested that the ZnSe nanowires with short ZnO branches show significantly higher and broader photoresponse compared to pure ZnSe nanowires. In green and red light spectrum, an increase of 3835% and 798% in photocurrent were observed. Finally, this study provides a new idea of material design by changing material composition ratio in heterostructure systems.

Abstract I
摘要 II
Acknowledgement III
Contents IV
Figures VII
Tables XII
Chapter 1 Introduction 1
1.1. Motivation 1
Chapter 2 Literature Review 7
2.1 Growth Mechanism of 1-D Nanostructures 7
2.1.1 Vapor-Liquid-Solid (VLS) Growth Method 8
2.1.2 Vapor-Solid (VS) Growth Method 10
2.1.3 Seed-directed Growth of Silver Nanowires 10
2.2 ZnSe 12
2.2.1 Growth of ZnSe Nanowires 14
2.3 ZnO 16
2.4 Silver Nanowires Transparent Conducting Electrode 16
Chapter 3 Experimental Characterization Techniques 22
3.1 Analysis Instruments 22
3.1.1 Field-emission Scanning Electron Microscopy (SEM) 22
3.1.2 High Resolution TransmissionElectron Microscopy 24
3.1.3 X-ray Diffractometer 25
3.1.4 UV-Visible-NIR Spectrophotometer 26
3.1.5 Photoluminescence Spectroscopy 27
3.1.6 Electrical Measurement System 28
Chapter 4 Experimental Procedures 30
4.1 Synthesis of ZnSe Nanowires 30
4.2 Synthesis of ZnSe-ZnO Branched Type-Π Heterostructure Nanowires 32
4.3 Synthesis of Silver Nanowires 34
4.3.1 Synthesis of Ag NWs with Large Dimension 35
4.3.2 Synthesis of Ag NWs with Small Dimension 37
4.4 Large Scale Aligned Ag Nanowires Transparent Conducting Electrode 38
4.5 Fabrication of ZnSe-ZnO Branched Nanowires Photodetector 40
Chapter 5 Results and Discussion 43
5.1 Aligned Silver Nanowires as Transparent Conducting Electrodes 43
5.1.1 Materials Characterization 43
5.1.2 TCE Performance 46
5.2 ZnSe-ZnO Branched Heterostructure Nanowires 49
5.2.1 Materials Characterization 49
5.2.2 Controlled Growth of ZnO Nanowires on ZnSe backbones 56
5.3 Performance of ZnSe-ZnO Heterostructure-based Photodetector 61
Chapter 6 Conclusions and Future Prospects 73
6.1 Conclusions 73
6.2 Future Prospects 74
Reference 75

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