本論文以二氧化鉿為基底材料之鐵電性及其可靠度研究探討。並建立相關理論及製程手法改善，以期鐵電材質可靠度表現諸如耐久度及正負極化方向資料保存性之效。首先第二章為建立製程視窗確立鐵電晶相開發，將鋁摻雜之二氧化鉿鐵電電容片施以不同熱預算回火處理。研究結果顯示當樣品回火溫度超過800oC時，MFIS鐵電電容片所展現鐵電性皆大幅下降即具有較少的鐵電極化量、單斜晶晶相的形成以及順時針的電容-電壓遲滯曲線散逸。為了符合目前氧化物厚度微縮趨勢下，第三章節將實驗進而討論不同鐵電二氧化鉿厚度對其鐵電性以及可靠度相依性討論。研究發現當鐵電層厚度減少至12奈米時，鐵電電容片不僅具較差的正交鐵電晶相，該元件於反覆操作下所產生的鐵電極化量變化也更為彰顯。從元件漏電流電性分析，產生鐵電極化量改變原因係來自於製程以及施壓所致氧空缺缺陷主導。上述研究顯示當鐵電元件進一步微縮時，開發新穎製程手法來增強鐵電可靠度是一項重要發展方針。且過去研究已有報導諸多鐵電二氧化鉿可靠度問題即喚醒以及疲勞效應，而該效應經常於電性上被觀測到但幾乎沒有提出相關製程來改善。據此，第四章節研究團隊利用氨氣電漿製程手法施以鐵電二氧化鉿鋯電容片上以達如何實現如何高品質的鐵電養化物堆疊之效。發現經氨氣電漿處理後之樣品，可以有效地抑制鐵電層與電極間介面反應，進一步改善鐵電極化資料保存性以及耐久度問題，可供實現高靠度FeRAM鐵電元件應用，詳細電漿製程描述於第四章。此外，由於鐵電可靠度表現與絕緣層特性息息相關，在第五章裡更進一步拓展氨氣電漿製程之鐵電二氧化鉿鋯材料多功能性，同時發展可供為後段電容元件之應用。該氨氣電漿處理後之鐵電二氧化鉿鋯電容元件具有高電容密度、極低的漏電流密度以及優異的氧化物可靠度電表現。第六章探討鐵電二氧化鉿鋯於半導體基板上可靠度之研究，研究結果發現將鐵電二氧化鉿鋯沉積於含鍺元素之矽鍺基板上，其可靠度電性表現含印痕效應、疲勞效應以及資料保存性皆優於將鐵電二氧化鉿鋯材質沉積於純矽基板上之電容元件表現。最後，在第七章則探討鈷60的輻射總劑量效應於鐵電二氧化鉿鋯基底的鐵電電晶體。相較於未經輻射照射後之樣品，經輻射照射後之樣品由於產生大量的氧空缺以及晶格位移，使得殘餘極化量大幅地降低。此外，因受到鐵電層間大量缺陷於鐵電材質內，電晶體受輻射效應影響甚鉅的電性表現為耐久度表現，而至於電晶體記憶體視窗以及資料保存性則相差無幾。

This thesis focuses on the investigation of HfO2-based ferroelectricity and reliability. We develop theories and process to reinforce reliability performance including endurance of cyclic polarization change and retention of poling states. Firstly, in Chapter 2, we performed the HfO2 capacitor with various thermal budget to establish the process window. It reveals that the ferroelectricity of MFIS is suppressed in terms of low polarization value, formation of monoclinic phase and vanish of clockwise hysteresis C-V curves while annealing temperature increase above 800 oC. Next in Chapter 3, turning to the experimental evidence on thickness dependent ferroelectricity in HfO2, with scaling trend of oxide thickness, we present that ferroelectric-HfO2 capacitor is suffered from not only poor crystallinity of orthorhombic phase but a significant cyclic-polarization change in the case of thin (12nm) thickness FE-HfO2. It has analyzed the causes of cyclic-polarization change form leakage current and has argued that process-induced and/or stress-induced oxygen-vacancy defect in ferroelectric oxide stack is a root cause. This work highlights the importance to adopt required process to enhance the reliability for the ever scaled ferroelectric material. Therefore, in Chapter 4, we examined how to achieve robust ferroelectric HfO2 oxide stack and developed NH3-plasma treated process to reinforced retention and suppress endurance issue for FeRAM application (wake-up and fatigue) which are commonly observed but scarcely resolved in the FE-HfO2 stack. From previous chapter had demonstrated a robust ferroelectric is achieved by nitration process, which is highly associated with dielectric properties. In Chapter 5, further explore NH3-plasna treated HfZrOx as back-end capacitor devices to realize multifunctional HfO2-based material. MIM capacitors based on the plasma-treated HfZrOx show remarkable advantages in terms of high capacitance, ultra-low low leakage current and robust dielectric reliability. In Chapter 6, along with evolution of channel materials, we have addressed the ferroelectric reliability of HfZrOx deposited on SiGe, showing that the reliability issue (such as imprint, fatigue, data retention) in Si platform can be alleviated by Ge incorporation into substrate. In Chapter 7, we further explored the reliability issue of Co60 radiation total ionizing dosage effect in HfZrOx-based FeFET. As compared to non-irradiated devices, polarization of irradiated HfZrOx material decreases with radiation does due to the radiation-induced oxygen vacancy and lattice distortion. However, with regard to the memory window at pristine state and retention performance for irritated HfZrOx FeFET still maintains as the non-irradiated devices. The most adverse effect of radiation impact is the endurance performance due to hole trapping from radiation-induced defects.

Contents
Abstact (chinese) i
Abstract iii
Acknowledgement v
Contents.. vi
Figure Captions x
Table Lists xix
Chapter 1 Introduction 1
1-1 Background 1
1-2 Ferroelectric Devices 2
1-3 Challenges of Ferroelectric HfO2-based NVM 4
1-3-1 Wake-up and Fatigue Effect in Ferroelectric Capacitor 4
1-3-2 Depolarization Field and Imprint Effect 5
1-3-3 Parasitic Charge Trapping Effect in FeFETs 7
1-4 Organization of the Thesis 8
1-5 References 10
Chapter 2 Ferroelectricity of Low Thermal-budget HfAlOx 21
for MFIS Gate Stack 21
2-1 Introduction 21
2-2 Experiment 23
2-3 Results and Discussion 25
2-3-1 Capacitance–Voltage Characteristic of MFIS 25
2-3-2 Xray–Diffraction Patterns for MFIS with various PMA 26
2-3-3 Current Analysis of MFIS 27
2-3-4 Polarization-Electric Field Characterization of MFIS 31
2-3-5 Summary of Memory Window 34
2-4 Summary 35
2-5 References 37
Chapter 3 Thickness Dependent Ferroelectric Reliability Behaviors for FE-HfZrOx MFM capacitor 52
3-1 Introduction 52
3-2 Experiment 53
3-3 Results and Discussion 53
3-3-1 Positive-Up-Negative-Down Analysis of MFM Capacitor 54
3-3-2 Thickness Dependent Polarization of FE-HfZrOx 55
3-3-3 Electrical Analysis of Cyclic Poling Endurance 56
3-3-4 Characterization of Rejuvenate Effect 58
3-3-5 Thickness Dependent Endurance Performance 59
3-4 Summary 61
3-5 References 62
Chapter 4 Impact of Plasma Treatment on Reliability Performance for HfZrOx-Based Metal-Ferroelectric-Metal Capacitors 73
4-1 Introduction 73
4-2 Experiment 74
4-3 Results and Discussion 75
4-3-1 Cycling Dependent Electrical Behaviors 75
4-3-2 Summary for Endurance and Retention Performance 78
4-3-3 Physical Analysis 79
4-4 Summary 80
4-5 References 82
Chapter 5 Dielectric Property Study of NH3-plasma Treated FE-HfZrOx for Back-end Capacitor 97
5-1 Introduction 97
5-2 Experiment 99
5-3 Results and Discussion 99
5-3-1 Impact of ALD Tool on HfZrOx properties 99
5-3-2 Effects of NH3-Plasma Treatment on Dielectric Property 101
5-3-3 Physical Analysis 102
5-4 Summary 103
5-5 References 104
Chapter 6 Enhanced Reliability of Ferroelectric HfZrOx on Semiconductor by Using Epitaxial SiGe as Substrate 116
6-1 Introduction 116
6-2 Experiment 117
6-3 Results and Discussion 118
6-3-1 Ferroelectricity of HfZrOx on semiconducting substrate 118
6-3-2 Ge Content-dependent Reliability Performance 119
6-3-3 Retention Performance 120
6-3-4 Physical Analysis for HfZrOx/Si and HfZrOx/SiGe Interface 123
6-4 Summary 125
6-5 References 126
Chapter 7 Total Ionizing Dosage Effect on Memory Characteristics for HfO2-Based Ferroelectric-Field-Effect Transistors 141
7-1 Introduction 141
7-2 Experiment 143
7-3 Results and Discussion 144
7-3-1 Impact of TID Effect on ID-VGS Curves 144
7-3-2 Impact of TID Effect on Ferroelectric Parameter 145
7-3-3 Impact of TID Effect on Ferroelectric Reliability 146
7-4 Summary 148
7-5 References 149
Chapter 8 Conclusions and Further Recommendations 157
8-1 Conclusions 157
8-2 Further Recommendation 160
Publication Lists 161

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18. T. S. Böscke, J. Müller, D. Bräuhaus, U. Schröder, and U. Böttger, “Ferroelectricity in hafnium oxide thin films,” Appl. Phys. Lett., vol. 99, no. 10, pp. 102903–1–102903–3, 2011.
19. S. Mueller, J. Mueller, A. Singh, S. Riedel, J. Sundqvist, U. Schroeder, and T. Mikolajick, “Incipient Ferroelectricity in Al–Doped HfO2 Thin Films,” Adv. Funct. Mater., vol. 22, no. 11, pp. 2412–2417, 2012.
20. J. Müller T. S. Böscke, D. Bräuhaus, U. Schröder, U. Böttger, J. Sundqvist, P. Kücher, T. Mikolajick, and L. Frey , “Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications,” Appl. Phys. Lett., vol. 99, no. 11, pp. 112901–1–112901–3, 2011.
21. C. H. Cheng and A. Chin, “Low-Leakage-Current DRAM-Like Memory Using a One-Transistor Ferroelectric MOSFET With a Hf–Based Gate Dielectric,” IEEE Electron Device Lett., vol. 35, no. 1, pp. 138–140, 2014.
22. T. Olsen, U. Schröder, S. Müller, A. Krause, D. Martin, A. Singh, J. Müller, M. Geidel, and T. Mikolajick, “Co-sputtering yttrium into hafnium oxide thin films to produce ferroelectric properties,” Appl. Phys. Lett., vol. 101, no. 8, pp. 082905-1-082905-4, 2012.
23. J. Muller, T. S. Boscke, S. Muller, E. Yurchuk, P. Polakowski, J. Paul, D. Martin, T. Schenk, K. Khullar, A. Kersch, W. Weinreich, S. Riedel, K. Seidel, A. Kumar, T. M. Arruda, S. V. Kalinin, T. Schlosser, R. Boschke, R. van Bentum, U. Schroder, and T. Mikolajick, “Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories,” IEEE International Electron Devices Meeting (IEDM), no. 9, pp. 10.8.1–10.8.4, 2013.
24. S. Mueller, C. Adelmann, A. Singh, S. Van Elshocht, U. Schroeder, and T. Mikolajick, “Ferroelectricity in Gd-doped HfO2 thin films,” ECS J. Solid State Sci. Technol., vol. 1, no. 6, pp. N123–N126, 2012.
25. T. Schenk, S. Mueller, U. Schroeder, R. Materlik, A. Kersch, M. Popovici, C. Adelmann, S. Van Elshocht, and T. Mikolajick, “Strontium doped hafnium oxide thin films: Wide process window for ferroelectric memories,” European Solid-State Device Research Conference (ESSDERC), pp. 260–263, 2013.
26. G. Li, C. W. Leung, Y. C. Chen, K. W. Lin, A. C. Sun, J. H. Hsu, and P. W. T. Pong, “Effect of annealing temperature on microstructure and magnetism of FePt/TaOx bilayer,” Microelectron. Eng., vol. 110, pp. 241–245, 2013.
27. T. S. Böscke, J. Müller, D. Bräuhaus, U. Schröder, and U. Böttger, “Ferroelectricity in hafnium oxide thin films,” Appl. Phys. Lett., vol. 99, no. 10, pp. 102903–1–102903–4, 2011.
28. S. Mueller, C. Adelmann, A. Singh, S. Van Elshocht, U. Schroeder, and T. Mikolajick, “ Ferroelectricity in Gd-Doped HfO2 Thin Films ,” ECS J. Solid State Sci. Technol., vol. 1, no. 6, pp. N123–N126, 2012.
29. P. Polakowski and J. Müller, “Ferroelectricity in undoped hafnium oxide,” Appl. Phys. Lett., vol. 106, no. 23, pp. 232905-1-232905-5, 2015.
30. M. H. Park, Y. H. Lee, H. J. Kim, Y. J. Kim, T. Moon, K. Do Kim, J. Müller, A. Kersch, U. Schroeder, T. Mikolajick, and C. S. Hwang, “Ferroelectricity and antiferroelectricity of doped thin HfO2-based films,” Adv. Mater., vol. 27, no. 11, pp. 1811–1831, 2015.
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36. K. Li, P. Chen, T. Lai, C. Lin, C. Cheng, C. Chen, Y. Wei, Y. Hou, M. Liao, M. Lee, M. Chen, J. Sheih, W. Yeh, and F. Yang, “Sub–60mV–Swing Negative–Capacitance FinFET without Hysteresis,” IEEE International Electron Devices Meeting (IEDM), pp. 620–623, 2015.
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42. A. Roy, A. Dhar, D. Bhattacharya, and S. K. Ray, “Structural and electrical properties of metal–ferroelectric–insulator–semiconductor structure of Al/SrBi2Ta2O9/HfO2/Si using HfO2 as buffer layer,” J. Phys. D. Appl. Phys., vol. 41, no. 9, p. 095408-1-095408-6, 2008.
43. G. Panomsuwan, O. Takai, and N. Saito, “Enhanced memory window of Au/BaTiO3/SrTiO3/Si(001) MFIS structure with high c-axis orientation for non-volatile memory applications,” Appl. Phys. A, vol. 108, no. 2, pp. 337–342, 2012.
44. G. Niu, S. Yin, G. Saint-Girons, B. Gautier, P. Lecoeur, V. Pillard, G. Hollinger, and B. Vilquin, “Epitaxy of BaTiO3 thin film on Si(001) using a SrTiO3 buffer layer for non-volatile memory application,” Microelectron. Eng., vol. 88, no. 7, pp. 1232–1235, 2011.
45. P. BYUNG EUN and L. GWANG GEUN, “Fabrication and characterization of MFIS-FET uing PVDF-TrFE/ZrO2/Si sructure,” J. Korean Phys. Soc., vol. 56, no. 5, pp. 1484-1487, 2010.

Chapter 3
1. J. Muller, T. S. Boscke, U. Schroder, R. Hoffmann, T. Mikolajick, and L. Frey, “Nanosecond polarization switching and long retention in a novel MFIS-FET based on ferroelectric HfO2,” IEEE Electron Device Lett., vol. 33, no. 2, pp. 185–187, 2012.
2. M. H. Lee, P. G. Chen, C. Liu, K. Chu, C. C. Cheng, M. J. Xie, S. N. Liu, J. W. Lee, S. J. Huang, M. H. Liao, M. Tang, K. S. Li, and M. C. Chen, “Prospects for ferroelectric HfZrOx FETs with experimentally CET=0.98nm, SSfor=42mV/dec, SSrev=28mV/dec, switch–off 0.2V, and hysteresis–free strategies,” IEEE International Electron Devices Meeting (IEDM), pp. 22.5.1–22.5.4, 2015.
3. I. Fina, L. Fàbrega, E. Langenberg, X. Martí, F. Sánchez, M. Varela, and J. Fontcuberta, “Nonferroelectric contributions to the hysteresis cycles in manganite thin films: A comparative study of measurement techniques,” J. Appl. Phys., vol. 109, no. 7, p. 074105-1-074105-6, 2011.
4. M. Pešić, F. P. G. Fengler, L. Larcher, A. Padovani, T. Schenk, E. D. Grimley, X. Sang, J. M. LeBeau, S. Slesazeck, U. Schroeder and T. Mikolajick, “Physical mechanisms behind the field-cycling behavior of HfO2-based ferroelectric capacitors,” Adv. Funct. Mater., vol. 26, no. 25, pp. 4601–4612, 2016.
5. M. H. Park, T. Schenk, C. M. Fancher, E. D. Grimley, C. Zhou, C. Richter, J. M. Lebeau, J. L. Jones, T. Mikolajick, and U. Schroeder, “A comprehensive study on the structural evolution of HfO2 thin films doped with various dopants,” J. Mater. Chem. C, vol. 5, no. 5, pp. 4677–4690, 2017.
6. H. J. Kim, M. H. Park, Y. J. Kim, Y. Hwan Lee, T. Moon, K. D. Kim, S. D. Hyun, C. S. Hwang, T. S. Böscke, J. Müller, D. Bräuhaus, U. Schröder and U. Böttger, “A study on the wake-up effect of ferroelectric Hf0.5Zr0.5O2 films by pulse-switching measurement,” Nanoscale, vol. 8, no. 3, pp. 1383–1389, 2016.
7. S. Mueller, J. Müller, R. Hoffmann, E. Yurchuk, T. Schlosser, R. Boschke, J. Paul, M. Goldbach, T. Herrmann, A. Zaka, U. Schroder, and T. Mikolajick, “From MFM capacitors toward ferroelectric transistors: endurance and disturb characteristics HfO2-based FeFET devices,” IEEE Trans. Electron Devices, vol. 60, no. 12, pp. 4199–4205, 2013.
8. C. Richter, T. Schenk, M. H. Park, F. A. Tscharntke, E. D. Grimley, J. M. LeBeau, C. Zhou, C. M. Fancher, J. L. Jones, T. Mikolajick, and U. Schroeder, “Si doped hafnium oxide- A ‘Fragile’ Ferroelectric System,” Adv. Electron. Mater., vol. 3, no. 10, pp. 1700131-1-1700131-12, 2017.
9. F. P. G. Fengler, M. Pešić, S. Starschich, T. Schneller, C. Künneth, U. Böttger, H. Mulaosmanovic, T. Schenk, M. H. Park, R. Nigon, P. Muralt, T. Mikolajick, and U. Schroeder, “Domain pinning: comparison of hafnia and PZT based ferroelectrics,” Adv. Electron. Mater., vol. 3, no. 4, pp. 1600505-1-1600505-10, 2017.
10. E. D. Grimley, T. Schenk, X. Sang, M. Pešić, U. Schroeder, T. Mikolajick, and J. M. LeBeau, “Structural changes underlying field-cycling phenomena in ferroelectric HfO2 thin films,” Adv. Electron. Mater., vol. 2, no. 9, pp. 1600173-1-1600173-6, 2016.
11. Y. Wu, S. Yu, B. Lee, and P. Wong, “Low-power TiN/Al2O3/Pt resistive switching device with sub-20 A switching current and gradual resistance modulation,” J. Appl. Phys., vol. 110, no. 9, pp. 094104-1-094104-5, 2011.
12. C. M. Chang, S. S. Chung, Y. S. Hsieh, L. W. Cheng, C. T. Tsai, G. H. Ma, S. C. Chien, and S. W. Sun, “The observation of trapping and detrapping effects in high-k gate dielectric MOSFETs by a new gate current random telegraph noise (IG-RTN) approach,” IEEE International Electron Devices Meeting (IEDM), no. 2, pp. 1–4, 2008.
13. F. Huang, X. Chen, X. Liang, J. Qin, Y. Zhang, T. Huang, Z. Wang, B. Peng, P. Zhou, H. Lu, L. Zhang, L. Deng, M. Liu, Q. Liu, H. Tian, and L. Bi, “Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition,” Phys. Chem. Chem. Phys., vol. 19, no. 5, pp. 3486–3497, 2017.
14. F. P. G. Fengler, R. Nigon, P. Muralt, E. D. Grimley, X. Sang, V. Sessi, R. Hentschel, J. M. LeBeau, T. Mikolajick, and U. Schroeder, “Analysis of performance instabilities of hafnia-based ferroelectrics using modulus spectroscopy and thermally stimulated depolarization currents,” Adv. Electron. Mater., vol. 4, no. 3, pp. 1700547-1-1700547-11, 2018.
15. M. Pesic, F. P. G. Fengler, S. Slesazeck, U. Schroeder, T. Mikolajick, L. Larcher, and A. Padovani, “Root cause of degradation in novel HfO2-based ferroelectric memories,” IEEE International Reliability Physics Symposium (IRPS), pp. MY–3–1–MY–3–5, 2016.

Chapter 4
1. M. H. Park, T. Schenk, C. M. Fancher, E. D. Grimley, C. Zhou, C. Richter, J. M. LeBeau, J. L. Jones, T. Mikolajick and U. Schroeder, “A comprehensive study on the structural evolution of HfO2 thin films doped with various dopants,” J. Mater. Chem. C, vol. 5, no. 5, pp. 4677–4690, 2017.
2. S. C. Chang, U. E. Avci, D. E. Nikonov, and I. A. Young, “A thermodynamic perspective of negative-capacitance field-effect transistors,” IEEE J. Explor. Solid-State Comput. Devices Circuits, vol. 3, pp. 56–64, 2017.
3. S. Mueller, R. Hoffmann, R. Boschke, J. Paul, M. Goldbach, T. Herrmann, A. Zaka, U. Schroeder, T. Mikolajick and S. Member, “From MFM-Capacitors towards ferroelectric transistors: Endurance and disturb characteristics of HfO2-based FeFET devices,” IEEE Transactions on Electron Devices, vol. 60, no. 12, pp. 4199-4205, 2013.
4. M. Kobayashi and T. Hiramoto, “Device design guideline for steep slope ferroelectric FET using negative capacitance in sub-0.2V operation: operation speed, material requirement and energy efficiency,” Symp VLSI Technol., pp. 212–213, 2015.
5. E. D. Grimley, T. Schenk, X. Sang, M. Pešić, U. Schroeder, T. Mikolajick, J. M. LeBeau, “Structural changes underlying field-cycling phenomena in ferroelectric HfO2 thin films,” Adv. Electron. Mater, vol. 2, no. 9, pp. 1600173-1–1600173-7, 2016.
6. Y. Wu, S. Yu, B. Lee, and P. Wong, “Low-power TiN/Al2O3/Pt resistive switching device with sub-20 A switching current and gradual resistance modulation,” J. Appl. Phys., vol. 110, no. 9, pp. 094104-1-094104-5, 2011.
7. E. Hildebrandt, J. Kurian, M. M. Mller, T. Schroeder, H. J. Kleebe, and L. Alff, “Controlled oxygen vacancy induced p-type conductivity in HfO2-x thin films,” Appl. Phys. Lett., vol. 99, no. 11, pp. 112902-1–112902-3, 2011.
8. C. Richter, T. Schenk, M. H. Park, F. A. Tscharntke, E. D. Grimley, J. M. Lebeau, C. Zhou, C. M. Fancher, J. L. Jones, T. Mikolajick, and U. Schroeder, “Si doped hafnium oxide- a “fragile ferroelectric system”, Adv. Electron. Mater., vol. 3, no. 7, pp. 1700131-1–1700131-12, 2017.
9. P. D. Lomenzo, Q. Takmeel, C. Zhou, C. M. Fancher, E. Lambers, N. G. Rudawski, J. L. Jones, S. Moghaddam, and T. Nishida, “TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films,” J. Appl. Phys., vol. 117, no. 13, pp. 134105-1–134105-10, 2015.
10. M. Peši, F. P. G. Fengler, S. Slesazeck, U. Schroeder, T. Mikolajick, L. Larcher, A. Padovani, R. Emilia and R. Emilia, “Root cause of degradation in novel HfO2-based ferroelectric memories,” IEEE International Reliability Physics Symposium, pp. 1–5, 2016.
11. T. Nishimura, L. Xu, S. Shibayama, T. Yajima, S. Migita and A. Toriumi, “Ferroelectricity of nondoped thin HfO2 films in TiN/HfO2/TiN stacks,” Jpn. J. Appl. Phys., vol. 55, no. 8S2, pp. 08PB01-1-08PB01-4, 2016.
12. H. J. Kim, M. H. Park, Y. J. Kim, Y. Hwan Lee, T. Moon, K. D. Kim, S. D. Hyun, C. S. Hwang, T. S. Böscke, J. Müller, D. Bräuhaus, U. Schröder and U. Böttger, “A study on the wake-up effect of ferroelectric Hf0.5Zr0.5O2 films by pulse-switching measurement,” Nanoscale, vol. 8, no. 3, pp. 1383–1389, 2016.
13. T. Mittmann, F. P. G. Fengler, C. Richter, M. H. Park, T. Mikolajick, and U. Schroeder, “Optimizing process conditions for improved Hf1−xZrxO2 ferroelectric capacitor performance,” Microelectron. Eng., vol. 178, pp. 48–51, 2017.
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15. Y. H. Chen, C. Y. Chen, C. L. Cho, C. H. Hsieh, Y. C. Wu, K. S. Chang-Liao and Y. H. Wu, “Enhanced sub 20-nm FinFET performance by stacked gate dielectric with less oxygen vacancies featuring higher current drive capability and superior reliability,” Int. Electron Devices Meeting Dig., pp. 576-579, 2016.
16. L. Wu, H. Y. Yu, X. Li, K. L. Pey, J. S. Pan, J. W. Chai, Y. S. Chiu, C. T. Lin, J. H. Xu, H. J. Wann, X. F. Yu, D. Y. Lee, K. Y. Hsu, and H. J. Tao, “Thermal stability of TiN metal gate prepared by atomic layer deposition or physical vapor deposition on HfO2 high-K dielectric,” Appl. Phys. Lett., vol. 96, no. 11, pp. 113510-1-113510-3, 2010.
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Chapter 5
1 C. C. Lin, Y. H. Wu, R. S. Jiang, and M. T. Yu, “MIM capacitors based on ZrTiOx/BaZryTi1−yO3 featuring record-low VCC and excellent reliability”, IEEE Electron Device Lett., vol. 34, no. 11, pp. 1418-1420, 2013.
2 A. Chaker, C. Bermond, P. Artillan, P. Gonon, C. Vallée, and A. Bsiesy, “Wide band frequency characterization of Al-doped and undoped rutile TiO2 thin films for MIM capacitors”, IEEE Electron Device Lett., vol. 38, no. 3, pp. 375-378, 2017.
3 Q. X. Zhang, B. Zhu, S. J. Ding, H. L. Lu, Q. Q. Sun, P. Zhou, and W. Zhang, “Full ALD Al2O3/ZrO2/SiO2/ZrO2/Al2O3 stacks for high-performance MIM capacitors”, IEEE Electron Device Lett., vol. 35, no. 11, pp. 1121-1123, 2014.
4 W. Weinreich, L. Wilde, J. Müller, J. S. E. H. Lemberger, and A. J. Bauer, “Structural properties of as deposited and annealed ZrO2 influenced by atomic layer deposition, substrate, and doping”, J. Vac. Sci. Technol. A., vol. 31, pp. 01A119-1-01A119-9, 2013.
5 C. Mart, S. Zybell, S. Riedel, M. Czernohorsky, K. Seidel, and W. Weinreich, “Enhanced reliability and capacitance stability of ZrO2-based decoupling capacitors by interface doping with Al2O3”, Microelectron. Eng., vol. 88, pp. 1079-1082, 2017.
6 D. H. Triyoso, W. Weinreich, K. Seidel, M. G. Nolan, P. Polakowski, D. Utess, S. Ohsiek, K. Dittmar, M. Weisheit, M. Liebau, and R. Fox. “ALD Ta2O5 and Hf-doped Ta2O5 for BEOL compatible MIM”, IEEE ICICDT, pp.1-4, 2014.
7 T. Ando, E. Cartier, P. Jamison, A. Pyzyna, S. Kim, J. Bruley, K. Chung, H. Shobha, I. Estrada-Raygoza, H. Tang, S. Kanakasabapathy, T. Spooner, L. Clevenger, G. Bonilla, H. Jagannathan, and V. Narayanan, “CMOS compatible MIM decoupling capacitor with reliable sub-nm EOT high-k stacks for the 7 nm node and beyond”, Int. Electron Devices Meeting Dig.., pp. 236-239, 2016.
8 W. S. Liao, C. H. Chang, S. W. Huang, T. H. Liu, H. P. Hu, H. L. Lin, C. Y. Tsai, C. S. Tsai, H. C. Chu, C. Y. Pai, W. C. Chiang, S. Y. Hou, S. P. Jeng, and D. Yu, “A manufacturable interposer MIM decoupling capacitor with robust thin high-k dielectric for heterogeneous 3D IC CoWoS wafer level system integration”, Int. Electron Devices Meeting Dig., pp. 634-637, 2014.
9 P. D. Lomenzo, P. Zhao, Q. Takmeel, S. Moghaddam, T. Nishida, M. Nelson, C. M. Fancher, E. D. Grimley, X. Sang, J. M. LeBeau, and J. L. Jones, “Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes,” J. Vac. Sci. Technol. B, vol. 32, no. 3, pp. 03D123-1-03D123-8, 2014.
10 M. H. Park, H. J. Kim, Y. J. Kim, W. Lee, T. Moon, and C. S. Hwang, “Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature”, Appl. Phys. Lett., vol. 102, no. 24, pp. 242905-1-242905-5, 2013.
11 T. Nishimura, L. Xu, S. Shibayama, T. Yajima, S. Migita, and A. Toriumi, “Ferroelectricity of nondoped thin HfO2 films in TiN/HfO2 /TiN stacks,” Jpn. J. Appl. Phys., vol. 55, no. 8S2, pp. 08PB01-1–08PB01-4, 2016.
12 J. Musschoot, D. Deduytschea, H. Poelmana, J. Haemersa, R. L. van Meirhaeghea, S. van den Bergheb and C. Detaverniera, “Comparison of thermal and plasma-enhanced ALD/CVD of vanadium pentoxide”, J. Electrochem. Soc., vol. 156, pp.122-126, 2009.
13 ITRS 2013 Radio frequency and analog/mixed-signal technologies (REAMS).
14 H. K. Yoo, J. S. Kim, Z. Zhu, Y. S. Choi, A. Yoon, M. R. Macdonald, X. Lei, T. Y. Lee, and D. Lee, “Engineering of ferroelectric switching speed in Si doped HfO2 for high-speed 1T-FeRAM application,” Int. Electron Devices Meeting Dig., vol. 5, pp. 481–484, 2017.
15 T. Yamaguchi, T. Zhang, K. Omori, Y. Shimada, Y. Kunimune, T. Ide, M. Inoue, and M. Matsuura, “Highly reliable ferroelectric Hf0.5Zr0.5O2 film with Al nanoclusters embedded by novel sub-monolayer doping technique,” Int. Electron Devices Meeting Dig., pp. 7.5.1–7.5.4, 2018.
16 Y. Goh and S. Jeon, “Enhanced tunneling electroresistance effects in HfZrO-based ferroelectric tunnel junctions by high-pressure nitrogen annealing,” Appl. Phys. Lett., vol. 113, no. 5, pp. 052905-1–052905-5, 2018.
17 P. Gonon, and C. Vallée, “Modeling of nonlinearities in the capacitance-voltage characteristics of high-metalinsulator-metal capacitors”, Appl. Phys. Lett., vol. 90, no. 14, pp. 142906-1-142906-3, 2007.
18 K. Xiong, J. Robertson and S. J. Clark, “Passivation of oxygen vacancy states in HfO2 by nitrogen”, J. Appl. Phys., vol. 99, no. 4, pp. 044105-1-044105-4, 2006.
19 K. Y. Chen, P. H. Chen, and Y. H. Wu, “Excellent reliability of ferroelectric HfZrOx free from wake-up and fatigue effects by NH3 plasma treatment”, Symp. VLSI Tech. Dig., pp.T84-T85, 2017.
20 Y. H. Chen, C. Y. Chen, C. L. Cho, C. H. Hsieh, Y. C. Wu, K. S. Chang-Liao and Y. H. Wu, “Enhanced sub 20-nm FinFET performance by stacked gate dielectric with less oxygen vacancies featuring higher current drive capability and superior reliability,” Int. Electron Devices Meeting Dig., pp. 576-579, 2016.
21 M. Pešic, F. P. Gustav Fengler, L. Larcher, A. Padovani, T. Schenk , E. D. Grimley, X. Sang, J. M. LeBeau, S. Slesazeck, U. Schroeder, and T. Mikolajick, “Physical mechanisms behind the field-cycling behavior of HfO2-based ferroelectric capacitors”, Adv. Funct. Mater., vol. 26, pp. 4601-4612, 2016.
22 G. G. Gischia, K. Croes, G. Groeseneken, Z. Tokei, V. Afanas'ev, and L. Zhao, “Study of leakage mechanism and trap density in porous low-k materials”, IEEE International Reliability Physics Symp., pp. 549-555, 2010.

Chapter 6
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Chapter 7
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