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作者(中文):劉宗翰
作者(外文):Liu, Zong-Han
論文名稱(中文):以微型鎳柱磁導引結構實現異向性磁阻感測器於出平面磁場量測性能提升
論文名稱(外文):Performance Enhancement of Out-of-Plane field measurements by anisotropic magneto-resistive sensor using micro-nickel-pillar flux guide structure
指導教授(中文):方維倫
指導教授(外文):Fang, Wei-Leun
口試委員(中文):羅松成
賴梅鳳
口試委員(外文):Lo, Sung-Cheng
Lai, Mei-Feng
學位類別:碩士
校院名稱:國立清華大學
系所名稱:動力機械工程學系
學號:102033607
出版年(民國):110
畢業學年度:109
語文別:中文
論文頁數:69
中文關鍵詞:異向性磁阻磁導引結構出平面磁場
外文關鍵詞:AMRmagnetic flux guideout-of-plane magnetic field
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本研究藉由柱狀磁導引結構用以增強磁組感測器之出平面方向感測能力。當柱狀磁導引結構整合於異向性磁阻旁時,會因為鎳柱底端磁力線發散的特性,可以成功導引出平面的磁力線於同平面。因此,本研究提出新型香菇頭形狀鎳柱的磁導引結構,進一步增加出平面磁場的吸收量,進而增大轉移到異向性磁阻的磁通量,使其提高出平面靈敏度。本文提出新型香菇頭形狀磁導引結構整合於異向性磁阻旁的磁感測元件,並對異向性磁阻元件、整合柱狀結構於異向性磁阻以及整合香菇頭結構於異向性磁阻等三種不同元件,進行電阻變化率對同平面磁場和出平面磁場的比較。三者對於出平面方向磁場量測,在磁場強度140Gauss以前,所得的電阻變化率分別為0.06%、0.02%以及0.008%。同時,量測同平面的難軸的磁場,在磁場強度30Gauss以前,三者的電阻變化率分別為0.15%、0.13%以及0.1%。使用香菇頭形狀作為磁導引結構之元件與不具備磁導引結構的異向性磁阻,在出平面方向與同平面方向分別有7.5倍與1.3倍的靈敏度提升。
This study use Ni pillar structure to integrated beside the anisotropic magnetoresistance (AMR) which can successfully guide the out-of-plane flux into in-plane sensing direction, because of the divergence of the bottom of pillar. This study proposed the novel mushroom-shaped nickel pillar structure as flux guide to enhance the collecting ability of flux, at the same time, enhance the amount of flux transferring to the AMR, and improve the out-of-plane field sensitivity. Novel mushroom-shaped flux guide structure integrated with AMR sensor has been proposed in this thesis, and finish measurements, compared to the reference type of nickel pillar integrated with AMR and pure AMR on the out-of-plane and in-plane magnetic field versus normalized resistance change (Rx-Ro)/Ro . According to out-of-plane field measurements, before the magnetic field 140Gauss, the normalized resistance changes are 0.06%、0.02% and 0.008%. Meanwhile, the in-plane hard-axis direction magnetic field measurements, the normalized resistance changes are 0.15%、0.13% and 0.1% before magnetic field is 30 Gauss. Thus, the mushroom type flux guide integrated with AMR compared to the pure AMR structure has 7.5 fold sensitivity increments on the out-of-plane magnetic field sensing, and on the in-plane direction sensing, has 1.3 fold sensitivity improvements.
摘要 I
Abstract II
致謝 IV
目錄 VIII
圖目錄 X
表目錄 XVI
第一章 緒論 1
1-1 前言 1
1-2 文獻回顧 4
1-2-1 霍爾感測器 4
1-2-2 異向性磁阻感測器 5
1-2-3 磁導引結構 5
1-3 研究目標 8
1-4 全文架構 8
第二章 元件感測原理與模擬分析 14
2-1 異向性磁阻 14
2-2 元件設計概念 21
第三章 元件製程流程與結果 34
3-1 製程流程與設計 34
3-2 製程結果與討論 35
第四章 元件量測結果 49
4-1 量測架設 49
4-1-1 異向性磁阻 49
4-1-2 磁導引結構之磁化程度 49
4-2 量測結果與討論 50
4-2-1 異向性磁阻 50
4-2-2 磁導引結構之磁化程度 51
第五章 結論與未來工作 56
5-1 結論 56
5-2 未來工作 57
參考文獻 64

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