近年來隨著消費性電子產品的爆發性成長、人工智慧物聯網與新興工業物聯等應用的多元發展，大量微型傳感器已被廣泛使用在不同的應用場景，並對不同環境的物理量變化或化學反應進行感測與數據採集。微型傳感器舉凡慣性、磁力、溫濕度、壓力、氣體、光學、電化學、生醫檢測等等，除了各自專一的感測功能，多重物理量的數據採集、數據融合與機器深度學習等都將成為未來的重點發展趨勢。將離散不同的傳感器集成在系統當中，不僅滿足現今市場應用對多重物理感測的需求，同時晶片的系統集成、微縮以及低功耗要求更是系統整合商所追求的目標。隨著微型化與高度系統集成的市場需求，微機電系統(Micro electromechanical system, MEMS)製程技術，更是佔有與半導體製程與集成電路相容的優勢，實現整合微型傳感器的批量生產。不同微型傳感器對封裝型態有不同的需求，有些傳感器的封裝型態需要氣密封裝與外部氣壓環境進行隔絕，有些傳感器則無需氣密封裝，反而需要與外部環境變化有所相互作用，進而達成感測功能。然而要將兩種不同型態的封裝集成於晶片之上，完成零層晶圓級封裝，則需要經由半導體製程整合的設計來加以實現。本研究基於晶圓廠的兩套微機電系統製程整合平台，在無須更動任何的製程步驟及增減光罩層數的過程，規劃兩個獨立的腔體於同一晶片上，並經由晶圓級鍵合的氣密封裝之後，同時產生兩個不同氣壓的腔體。其中一個為氣密的腔體，適用於對真空度有要求的傳感器，另一個則為非氣密的腔體，適用在需要與外界環境相互反應的傳感器。為了達成此目的，在晶圓鍵合處底下，開通一道或數道的狹窄通道，使得腔體內與外在環境的氣壓達到一個平衡。同時，對於氣密腔體的真空程度，則由最終晶圓鍵合時的真空壓力條件所決定。本研究提出三種對壓力敏感的微型傳感器設計，包含: 微型派藍尼真空計、靜電機械式共振器及電容式壓力感測器，做為原MEMS製程平台驗證的實驗載體，並經由量測結果證明本研究提出的製程整合設計方法，成功擴展原有的兩套製程整合平台，實現不同傳感器集成在同一個晶片之上的應用。

This study presents the approaches to simultaneously realize various MEMS devices respectively encapsulated inside the sealed and unsealed chambers by using the existing micro fabrication and wafer level capping processes. In general, the wafer level capping process could encapsulate MEMS devices inside sealed chambers. In this study, the air leakage paths from the encapsulated chamber to the ambient have been selectively patterned and fabricated using the existing processes, so that the unsealed chambers are also achieved. The unsealed chamber is connected to the ambient and can be employed to encapsulate environmental monitoring devices such as humidity or pressure sensors. However, the sealed chamber is isolated with the ambient. The pressure in the sealed chamber is determined by the vacuum condition during the wafer level capping process. The sealed chamber could encapsulate devices such as motion sensors and resonators in the required vacuum condition. Thus, the presented approaches could enable existing process platforms to monolithically fabricate and encapsulate more devices for various applications. The devices such as micromachined Pirani gauge, resonator, and pressure sensor are fabricated and characterized to verify the present approaches. Measurement results indicate that sensors in different pressure conditions are respectively achieved by unsealed chambers and sealed chambers.

中文摘要 i
Abstract ii
目 錄 iii
圖目錄 v
表目錄 ix
第一章 緒論 1
1-1 前言 1
1-2 文獻回顧 5
1-3 集成非氣密腔體的製程整合方式 19
1-4 研究動機 20
1-5 研究目標與架構 23
第二章 擴充BOC MEMS製程平台的非氣密腔體設計 42
2-1 BOC MEMS製程整合平台介紹 43
2-2通氣渠道的設計考量與製作 46
2-3 導入現場檢測的氣壓工具 49
2-4 量測架設與測試結果 53
第三章 擴充BOD MEMS製程平台的非氣密腔體設計 63
3-1 BOD MEMS製程整合平台介紹 64
3-2 通氣渠道的設計考量與製作 67
3-3 量測架設與測試結果 69
第四章 非氣密腔體內的微型傳感器應用 84
4-1 BOD MEMS製程平台上的靜電式機械共振器設計開發 84
4-1-1 靜電式機械共振器元件設計 86
4-1-2 製程與量測結果 87
4-2 BOC MEMS製程平台上的電容式壓力感測器設計開發 89
4-2-1 電容式壓力感測器設計 90
4-2-2 製程與量測結果 92
4-3擴充MEMS平台的結果與討論 94
第五章 論文貢獻與未來工作 106
5-1 擴充BOC MEMS製程平台功能 106
5-2 擴充BOD MEMS製程平台功能 107
5-3 建構可量化晶圓鍵合表現的晶圓檢測 108
5-4 製程平台設計改善與應用 109
參考文獻 111

[1] Yole developpment, Sensors for cellphones and tablets 2016, Yole developpment marketing report, Mar. 2016.
[2] 經濟部工業局, 智慧生活的現況與未來, May. 2018.
[3] 鍾昀泰, 5G未來商業模式與展望, 德勤商務法律事務所, Dec. 2019. [online available] https://www2.deloitte.com/content/dam/Deloitte/tw/Documents/technology-media-telecommunications/deloitte_5g_academy.pdf
[4] 張志勇, 物聯網概論, 碁峰資訊, 2013.
[5] Yole developpment, Status of the MEMS industry 2018, Yole developpment marketing report, May 2018.
[6] C. Fischer, F. Forsberg, M. Lapisa, S. J. Bleiker, G. Stemme, N. Roxhed, F. Niklaus, “Integrating MEMS and ICs,” Microsystems and Nanoengineerings, Vol. 1, 15005, May 2015.
[7] A. Woolley, J. Logan, K. Long, P. Iannacito, “Touch sensor controller sensor hub,” U. S. Patent 8736551, Jul. 12, 2012.
[8] STMicroelectronics LIS331, http://www.st.com/web/en/press/en/p3383
[9] Z. Wang, “3-D integration and through-silicon vias in MEMS and microsensors,” J. Microelectromechanical Systems, Vol. 24, no. 5, pp.1211-1244, 2015.
[10] Mentor, Meeting MEMS design challenges with unique layout editing and verification features-Part1/Part 2 white paper, https://www.mentor.com/tannereda/mems-design
[11] G. Kovacs, Micromachined Transducers Sourcebook, WCB/McGraw-Hill, 1998.
[12] Yole developpment, MEMS and sensors for automotive, Yole developpment marketing report, Aug 2017.
[13] W. Arden, M. Brilloue¨t, P. Cogez, M. Graef, B. Huizing, and R. Mahnkopf, More-than-Moore white paper, ITRS (International Technolgoy Roadmap for Semiconductors), 2010.
[14] 周碩彥, “物聯網發展趨勢展示內容” 研究報告, 國立科學工藝博物館委託研究計劃, 2015.
[15] G. Girardin, “MEMS & Sensors market: current challenges & future opportunities,” Yole developpment marketing report, Mar. 2017.
[16] 李昇憲, 清華大學NEMS580000 射頻微機電元件及應用, 2012.
[17] M. Gad-el-Hak, MEMS: Design and Fabrication, CRC/Taylor & Francis, 2006.
[18] M. Madou, Fundamental of Microfabrication, CRC press, pp.378-395, 1997.
[19] MEMSCAP, http://www.memscap.com/products/mumps
[20] 莊達人, VLSI製造技術, 高立圖書有限公司, 1998.
[21] F. Lärmer, A. Schilp, “Method for anisotropic plasma etching of substrates”, US Patent 5,498,312, March 12, 1996.
[22] B. Wu, A. Kumar, S. Pamarthy, “High aspect ratio silicon etch: A review,” J. Appl. Phys. 108, 051101, 2010.
[23] W. W. Shen, K. N. Chen, “Three dimensional integrated circuit (3D IC) key technology: Through silicon via (TSV),” Nanoscale Res Lett., Vol. 12:56, 2017.
[24] S. G. Wu, C. C. Wang, B. C. Hseih, Y. L. Tu, C. H. Tseng, T. H. Hsu, R. S. Hsiao, S. Takahashi, R. J. Lin, C. S. Tsai, Y. P. Chao, K. Y. Chou, P. S. Chou, H. Y. Tu, F. L. Hsueh, L. Tran, “A leading-edge 0.9um pixel CMOS image sensor technology with backside illumination: Future challenges for pixel scaling,” IEEE IEDM digest, s14p1, 2010.
[25] M. Esashi, “Wafer level packaging of MEMS,” J. Micromechanics and Microengineering, vol. 18, 073001, 2008.
[26] A. Hilton, D. S. Temple, “Wafer-level packaging of smart sensors: A review,” J. Sensors, vol. 16, no. 1819, 2016.
[27] N. Abele, D. Grogg, C. Hibert, F. Casset, P. Ancey, A. Ionescu, “0-level vacuum packaging RT process for MEMS resonators,” Symp. Design Test Integration Packag. MEMS/MOEMS (DTIP 2007), pp. 33-36, 2007.
[28] W.S. Lei, A. Kumar, R. Yalamanchili, “Die singulation technologies for advanced packaging:Ａ critical review,” Journal of Vacuum Science & Technology B, vol. 30, 040801, 2012.
[29] R. Ghodssi, P. Lin, MEMS Materials and Processes Handbook, first ed., Springer, Berlin, 2011.
[30] M. Alexe, U. Gosele, Wafer bonding: applications and technology, 1st ed. New York: Springer, 2004.
[31] W. C. Welch III, Vacuum and hermetic packaging of MEMS using solder, Ph.D. thesis in the university of Michigan, 2008.
[32] S. Sood, R. Thomas, T. Adams, “Acoustic Characterization of Bonded Wafers,” ECS Transactions. Vol. 16, no. 8, pp.425-431, 2008.
[33] M. K. Weldon, V. E. Marsico, Y. J. Chabal, D. R. Hamann, S. B. Christman, E. E. Chaban, “Infrared spectroscopy as a probe of fundamental processes in microelectronics: silicon wafer cleaning and bonding,” Surface Science, vol. 368, pp.163-178, 1996.
[34] STMicroelectronics LSM6DS3, https://www.st.com/
[35] Invensense ICM-20789, https://invensense.tdk.com/
[36] Bosch Sensortec IMX160, https://www.bosch-sensortec.com/
[37] Sensirion SCD40, https://www.sensirion.com/
[38] P. Merz, W. Reinert, K. Reimer, B. Wagner, “PSM-X2:Polysilicon surface micromachining process platform for vacuum-packeaged sensors,” Mikrosystemtechnik Kongress, Freiburg, Germany: VDE Verlag, pp. 468-471, 2005.
[39] P. Merz, K. Reimer, M. Weib, O. Schwarzelbach, C. Schroder, A. Giambastiani, A. Rocchi, M. Heller, “Combined MEMS inertial sensors for IMU applications,” Proc. IEEE Micro Electro Mechanical Systems Conf. MEMS’10, Wanchai, Hong Kong, 24 Jan.~28 Jan.2010, pp. 488-491.
[40] S. Nasiri, J. Seeger, “X-Y axis dual-mass tuning fork gyroscope with vertically integrated electronics and wafer-scale hermetic packaging,” U. S. Patent 6892575, Oct. 20, 2003.
[41] S. Nasiri, F. Flannery, “Vertically integrated MEMS structure with electronics in a hermetically sealed cavity,” U.S. Patent 7104129, Feb. 2, 2004.
[42] TDK-Invensense, https://invensense.tdk.com/products/motion-tracking/6-axis/mpu-6050/
[43] K. Huang, M. Lim, S. Nasiri, “Integrated MEMS devices with controlled pressure environments by means of enclosed volumes,” U. S. Patent 8350346, Jul. 3, 2012.
[44] H. Johari, F. Ayazi, “Capacitive bulk acoustic wave silicon disk gyroscope,” in Proc. International Electron Devices Meeting. IEDM’06, San Francisco, CA, USA, 11 Dec. ~13 Dec.2006, pp. 1-4.
[45] F. Ayazi, K. Najafi, “High aspect-ratio combined poly and single-crystal silicon (HARPSS) MEMS technology,” J. Microelectromechical Systems, vol. 9, no. 3, pp.288-294, 2000.
[46] Prof. K. Najafi research group in university of Michigan, https://najafi.engin.umich.edu/
[47] F. Ayazi, “Multi-DOF inertial MEMS: From gaming to dead reckoning,” in Proc. Solid-state sensors, Actuators and microsystems conference (TRANSDUCERS’11), Beijing, China, 5-9 Jun.2011, pp2805-2808.
[48] D. E. Serrano, Tutorial of Design and analysis of MEMS gyroscopes, IEEE Sensors conference, Baltimore, Maryland, 3-6 Sep. 2013.
[49] SiTime, https://www.sitime.com/
[50] A. Partridge, M. Lutz, “Episeal pressure sensor and method for making an episeal pressure sensor,” U.S. Patent 6928879, Aug. 16, 2005.
[51] E. J. Ng, C. F. Chiang, Y. Yang, V. A. Hong, C. H. Ahn, and T. W. Kenny, “Ultra-high aspect ratio trenches in single crystal silicon with epitaxial gap tuning,” Proc. 17th Int. Conf. Solid-State Sens., Actuators, Microsyst. Conf. (TRANSDUCERS’13), Jun. 2013, pp. 182–185.
[52] R. Melamud, S.A. Chandorkar, B. Kim, H. K. Lee, J. C. Salvia, G. Bahl, M. A. Hopcroft, T.W. Kenny, “Temperature-Insensitive Composite Micromechanical Resonators, ” Journal of Microelectromechanical Systems, Vol. 18, No. 6, pp. 1409-1419, 2009.
[53] R. N. Candler, M. A. Hopcroft, B. Kim, W. T. Park, R. Melamud, M. Agarwal, G. Yama, A. Partridge, M. Lutz, T. W. Kenny, “Long-Term and Accelerated Life Testing of a Novel Single-Wafer Vacuum Encapsulation for MEMS Resonators,” Journal of Microelectromechanical Systems, vol. 15, no. 6, pp. 1446-1456, 2006.
[54] C. H. Ahn, D. L. Christensen, D. B. Heinz, V. A. Hong, E. J. Ng, J. Rodriguez, Y. Yang, G. O'Brien, and T. W. Kenny, “Encapsulated inertial systems,” IEEE International Electron Devices Meeting (IEDM), pp. 263-263, Dec 2016.
[55] A. Hong, J. Stehle, C. H. Ahn, D. B. Heinz, G. Yama, B. Kim, G. J. O'Brien, T. W. Kenny, “Capacitive sensor fusion: Co-fabricated X/Y and Z-axis accelerometers, pressure sensor, thermometer, ” Proc. 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS’15), Jun 2015, pp. 295-298.
[56] Y. Yang, E. J. Ng, Y. Chen, I. B. Flader, C. H. Ahn, V. A. Hong, T. W. Kenny, “A unified epi-seal process for resonators and inertial sensors,” Proc. 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS’15), Jun 2015,, pp. 1326-1329.
[57] C. L. Roozeboom, B. E. Hill, V. A. Hong, C. H. Ahn, E. J. Ng, Y. Yang, T. W. Kenny, M. A. Hopcroft, B. L. Pruitt, “Multifunctional Integrated Sensors for Multiparameter Monitoring Applications,” J. Microelectromechanical Systems, Vol. 24, No. 4, pp. 810-821, Aug 2015.
[58] N. Banerjee, A. Banerjee, N. Hasan, S. S. Pandey, B. P. Gogoi, C. H. Mastrangelo, “A monolithically integrated multisensory platform,” IEEE Sensors Journal, Vol. 16, pp. 8854-8860. 2016.
[59] N. Banerjee, A. Banerjee, S. S. Pandey, B. P. Gogoi, C. H. Mastrangelo, “Encroachment and line of sight blocking in microcavity sealing,” Proc. IEEE SENSORS, Nov. 2015, pp. 1–3.
[60] Sandia National Laboratories, http://www.sandia.gov/mstc/mems/
[61] W. K. Tsang, A. Core, “Method for fabricating monolithic chip containing integrated circuitry and suspended microstructure,” U.S. Patent 5326726, Jun. 21, 1993.
[62] D. Galayko, L. Buchaillot, A. Kaiser, C. Combi, B. Legrand, D. Collard, “Clamped-clamped beam micro-mechanical resonators in thick-film epitaxial polysilicon technology,” Proc. 32nd European Solid-State Device Research Conference. ESSDRC’02, 24-26 Sep., 2002, pp. 447-450.
[63] I. Hirama, “New MEMS sensor process by TSV technology for smaller packaging,” Proc. IEEE Int. Conf. Electron. Packag. iMAPS All Asia Conf. (ICEP-IACC), Apr. 2015, pp. 456–459.
[64] T. Aono, K. Suzuki, M. Kanamaru, R. Okada, D. Maeda, M. Hayashi, Y. Isono, “Development of wafer-level-packaging technology for simultaneous sealing of accelerometer and gyroscope under different pressures,” J. Micromechanics and Microengineering, Vol. 26, 105007, 2016.
[65] H. Jeong, K. Yamanaka, Y. Goto, T. Aono, M. Hayashi, “Three-axis MEMS inertial sensor for automobile applications,” Proc. IEEE Sensors. Sensors’11, Limerick , Ireland, 28 Oct.~31 Oct. 2011, pp444-447.
[66] T. Aono, K. Suzuki, A. Koide, H. Jeong, M. Degawa, K. Yamanaka, M. Hayashi, “Wafer level two-step bonding process for combined sensor with two different pressure chambers,” The 16th International Conference on Solid-State Sensors, Actutators & Microsystems, Transducers 2011, pp. 382-385.
[67] Teledyne DALSA, http://www.teledynedalsa.com/corp/news/426/
[68] Ph. Robert, V. Nguyen, S. Hentz, L. Duraffourg, G. Jourdan, J. Arcamone, S. Harrisson, “M&NEMS: A new approach for ultra-low cost 3D inertial sensor,” Proc. IEEE Sensors. Sensors’09, Canterbury, New Zealand, 25 Oct.~28 Oct. 2009, pp963-966.
[69] A. Walther, M. Savoye, G. Jourdan, P. Renaux, F. Souchon, P. Robert, C. L. Blanc, N. Delorme, O. Gigan, C. Lejuste, “3-axis gyroscope with Si nanogage piezo-resistive detection,” Proc. IEEE Micro Electro Mechanical Systems Conf. MEMS’12, Paris, France, 29 Jan.~2 Feb.2012, pp. 480-483.
[70] J. Czarny, A. Walther, B. Desloges, P. Robert, E. Redon, T. Verdot, K. Ege, C. Guianvarc’h, J. L. Guyader, “New architecture of MEMS microphone for enhanced performances,” Proc. International semiconductor conference Dresden-Grenoble. ISCDG’13, Dresdon, Germany, 22 Sep. ~ 23 Sep.2013, pp1-4.
[71] P. Robert, V. Nguyen, S. Hentz, L. Duraffourg, G. Jourdan, J. Arcamone, S. Harrisson, “N&MEMS: A new approach for ultra-low cost 3D inertial sensor,” IEEE Sensors conference, pp. 963-966, 2009.
[72] A. Walther, M. Savoye, G. Jourdan, P. Renaux, F. Souchon, P. Robert, C. L. Blanc, N. Delorme, O. Gigan, C. Lejuste, “3-axis gyroscope with si nanogage piezo-resistive detection,” Proc. IEEE Micro Electro Mechanical Systems Conf. MEMS’12, Paris, France, 29 Jan.~2 Feb.2012, pp. 480-483.
[73] C. M. Liu, C. S. Chou, C. F. Tsai, Y. M. Shen, S. F. Chen, C. W. Cheng, H. C. Tuan, A. Kalnitsky, S. Cheng, C. H. Lin, T. K. Chung, K. S. Chang, Y. S. Liu, “MEMS technology development and manufacturing in a CMOS foundry,” The 16th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS'11), 5–9 Jun 2011; Beijing, China; 2011: 807–810.
[74] tsmc official publication, (2011). tsmc 2011 business overview [online available] http://www.tsmc.com/download/ir/annualReports/2011_Business_Overview_E.pdf
[75] C. W. Cheng, K. C. Liang, C. H. Chu, T. H. Lee, J. K. Lee, C. H. Lin, H. C. Tuan, A. Kalnitsky, W. Fang, D. A. Horsley, “Bulk-Si with poly bump process scheme for MEMS sensors,” IEEE sensor conference, Taipei, Taiwan, pp. 615-618, Oct., 2012.
[76] C. W. Cheng, K. C. Liang, C. H. Chu, W. Fang, “Implementation of various vacuum conditions in sealed chambers for wafer-level bonding by using an embedded cavity,” J. Micromechanics and Microengineering, 27 015002, 2017.
[77] S. W. Cheng, J. C. Weng, K. C. Liang, Y. C. Sun, W. Fang, “Realize multiple hermetic chamber pressures for system-on-chip process by using the capping wafer with diverse cavity depths,” J. Micromechanics and Microengineering, 28 045005, 2018.
[78] Yole Development, 6- & 9-axis sensors consumer inertial combos, Yole development marketing report, Oct 2014.
[79] T. Giorgi, “Getters and gettering,” Japanes Journal of Applied Physics, Vol. 2, p.53-60, 1974.
[80] Micro Structures & Sensors Lab, http://micromachine.stanford.edu/
[81] D. Sparks, J. Trevino, S. M. Ansari, N. Najafi, “An all-glass chip-scale MEMS package with variable cavity pressure,” J. Micromechanics and Microengineering, Vol. 16, pp. 2488-2491, 2006.
[82] J. Gonska, R. Hausner, “Micromechanical device which has cavities having different internal atmospheric pressures,” U. S. Patent 8035209, Oct. 11, 2011.
[83] K. S. Chang, “Method of sealing and shielding for dual pressure MEMS devices,” U. S. Patent 9481564, Nov. 1, 2016.
[84] M. Daneman, M. Lim, K. Huang, I. Tchertkov, “Method for CMOS-MEMS integrated devices with multiple sealed cavities maintained at various pressures,” U. S. Patent 9540230, Jan. 10, 2017.
[85] K. C. Liang, C. W. Cheng, C. H. Lin, W. C. Lai, W. Fang, “Wafer level packaging for chambers of two pressures,” Transducers’13, Barcelona, Spain, 16-20 Jun. 2013, pp. 1075-1078.
[86] Y. C. Chen, W. C. Lin, H. S. Wang, C. C. Fan, C. H. Lin, C. S. Chou, C. M. Liu, “Differential micro Pirani gauge for monitoring MEMS wafer level package,” Proc. IEEE MEMS Conference, Estoril, Portugal, 18-22 Jun. 2015, pp. 89-92.
[87] K. C. Liang, C. W. Cheng, “MEMS devices, packaged MEMS devices, and methods of manufacture thereof,” U.S. Patent 8952465, Jul. 13, 2012.
[88] B. P. Gogoi, “Multiple microelectromechanical (MEMS) devices formed on a single substrate and sealed at different pressures and method therefor,” U. S. Patent 7159459, Jan. 9, 2007.
[89] M. Daneman, M. Lim, K. Huang, I. Tchertkov, “Methods for CMOS-MEMS integrated devices with multiple sealed cavities maintained at various pressures,” U. S. Patent 9540230, Jan. 10, 2017.
[90] K. C. Liang, W. Fang, “Design and implementation of monolithically integrated sealed and unsealed chambers by using the wafer level packaging,” J. Micromechanics and Microengineering, 29 095008, 2019.
[91] T. Plach, K. Hingel, S. Tollabimazraehno, G. Hesser, V. Dragoi, M. Wimplinger, “Mechanisms for room temperature direct wafer bonding,” J. Applied Physics, 113 094905, 2013.
[92] B. Vu, P. Zacracky, “Patterned eutectic bonding with Al/Ge thin films for microelectromechanical systems,” J. Vacuum Sci. Technol. B, vol. 14, no. 4, pp. 2588-2494, Jul./Aug. 1996.
[93] S. S. Nasiri, A. F. Flannery, “Method of fabrication of a Al/Ge bonding in a wafer packaging environment and a product produced therefrom,” U.S. Patent 7442570, Oct. 28, 2008.
[94] M. W. Heller, M. Zoberbier, T. Fujita, M. Eichler, “Surface preparation and eutectic wafer bonding,” ECS Transactions, Vol. 75, no.9, pp.229-239, 2016.
[95] C. S. Tan, K. N. Chen, S. J. Koester, 3D Integration for VLSI Systems, Jenny Stanford Publishing, 2011.
[96] S. Lee, L. Khoo, L. Li, P. Ang, Z. Mo, “Sample Preparation Methodology for a CMOS+MEMS Device with Low Frequency and Seal Ring Short Failures,” IEEE IPFA Conference, Singapore, September 2018, pp. 486-491.
[97] R. R. Tummala, Fundamentals of Microsystems Packaging, New York Press, 2001.
[98] S. Millar, M. Desmulliez, “MEMS ultra low leak detection methods: a review,” J. Sensor Review, vol. 29, no. 4, pp. 339-344, 2009.
[99] Q. Li, H. Goosen, F. V. Keulen, J. V. Beek, G. Zhang, “Assessment of testing methodologies for thin-film vacuum MEMS packages,” J. Microsystem Technologies, 15, pp.161-168, 2009.

[100] Department of defense test method standard microcircuits, pp.1-13, MIL-STD-883F, Jun. 18,2004.
[101] C. H. Mastrangelo, R. S. Muller, “Fabrication and performance of a fully integrated Pirani pressure gauge with digital readout,” Proc. Solid-state sensors, Actuators and microsystems conference. Transducer’91, San Francisco, CA, 24-27 Jun. 1991, pp. 245-248.
[102] F. Santagata, E. Iervolino, L. Mele, A. W. Herwaarden, J. Creemer, P. M. Sarro, “An analytical model and verification for MEMS pirani gauges,” J. Micromechanics and Microengineering, vol. 21, pp.1-7, 2011.
[103] J. Chae, B. H. Stark, K. Najafi, “A Micromachined Pirani Gauge With Dual Heat Sinks,” IEEE Transactions on advanced packaging, Vol. 28, no. 4, pp. 619-625, 2005.
[104] K. Khosraviani, A. M. Leung, “The nanogap Pirani a pressure sensor with superior linearity in an atmospheric pressure range,” J. Micromechanics and Microengineering, Vol. 19, 045007, 2009.
[105] F. Santagata, J. F. Creemer, E. Iervolino, P. M. Sarro, “Tube-shaped Pirani gauge for in situ hermeticity monitoring of SiN thin-film encapsulation,” J. Micromech. Microeng. Vol. 22, 105025, 2012.
[106] Y. C. Sun, K. C. Liang, C. L. Cheng, W. Fang, “A CMOS MEMS Pirani vacuum gauge with complementary bump heat sink and cavity heater,” IEEE MEMS Conference, San Francisco, CA, January 2014, pp. 676-679.
[107] Q. Li, J. F. L. Goosen, J. T. M. van Beek, F. van Keulen, “A SOI pirani sensor with triple heat sinks,” Sensors and Actuators A: Physical, vol. 162, pp. 267-271, 2010.
[108] W. Jiang, X. Wang, J. W. Zhang, “A single crystal silicon micro-pirani vacuum gauge with high aspect ratio structure,” Sensors and Actuators A: Physical, vol. 163, pp. 159-163, 2010.
[109] M. Kubota, Y. Mita, M. Sugiyama, “Silicon sub-micron-gap deep trench Pirani vacuum gauge for operation at atmospheric pressure,” J. Micromech. Microeng. Vol. 21, 045034, 2011.
[110] E. S. Topalli, K. Topalli, S. E. Alper, T. Serin, T. Akin, “Pirani vacuum gauge using silicon-on-glass and dissolved-wafer processes for the characterization of MEMS vacuum packaging,” IEEE Sensor Journal, Vol. 9, no. 3, pp.263-270, 2009.
[111] Invensense MPU-6050, https://invensense.tdk.com/
[112] C. W. Cheng, K. C. Liang, C. H. Chu, D. A. Horsley, W. Fang,“ Single chip process for sensors implementation, integration, and condition monitoring,” Proc. Solid-state sensors, Actuators and microsystems conference. Transducer’13, Barcelona, Spain, 16 Jun. ~ 20 Jun.2013, pp730-733.
[113] V. T. Rouf, M. Li, D. A. Horsley, “Area-efficient three-axis MEMS Lorentz force magnetometer,” IEEE Sensors Journal, Vol. 13, no. 11, pp.4474-4481, 2013.
[114] K. C. Liang, C. W. Cheng, C. H. Lin, W. Fang, “ A novel low pressure sensor with fin-structures,” Proc. IEEE Sensors. Sensors’12, Taipei, Taiwan, 28 Oct.~31 Oct. 2012, pp1939-1942.
[115] F. Y. Lee, K. C. Liang, C. W. Cheng, S. S. Li, W. Fang, “Acceleration insensitive fully-decoupled tuning fork (FDTF) MEMS vibratory gyroscope with 1/HR BIAS instability,” Micro Electro Mechanical Systems (MEMS), 2016 IEEE 29th International Conference, Shanghai, China, 24-28 Jan. 2016, pp. 946-949.
[116] T. K. Nunan, “Apparatus and method of forming a MEMS device with etch channels,” U. S. Patent 9446948, Sep. 20, 2016.
[117] G. Kim, C. Seok, T. Kim, J. H. Park, H. Kim, H. Ko, “The Micro Pirani Gauge with Low Noise CDS-CTIA for In-Situ Vacuum Monitoring,” Journal of semiconductor technology and science, vol. 14, no. 6, pp. 733-740, 2014.
[118] S. S. Rao, Mechanical vibrations, 3rd ed. Addison-Wesley, 1995.
[119] D. K. Shaeffer, “MEMS inertial sensors: A tutorial overview,” IEEE Commun. Mag., vol. 51, no. 4, pp. 100-109, Apr. 2013.
[120] N. Shiraishi, M. Kimura, Y. Ando, “Development of PMMA-based gas sensor and its evaluation using a VOC dilution flow system,” J. Microelectronic Engineering, Vol. 19, pp. 115-121, 2014.
[121] M. Gologanu, C. Bostan, V. Avramescu, O. Buiu, “Damping effects in mems resonators,” CAS 2012 International Semiconductor Conference, Vol. 1, Oct 2012, pp. 67-76.
[122] W. P. Eaton, J. H. Smith, “Micromachined Pressure Sensors: Review and Recent Developments,” Smart Materials and Structures, vol. 6, no. 5, pp. 530-9, Oct. 1997.
[123] Novosense, http://www.novosns.com/web/
[124] SPEA, https://www.spea.com/
[125] B. H. Stark, K. Najafi, “A low temperature thin film electroplated metal vacuum package,” J. Microelectromechanical Systems, Vol. 12, no. 2, pp. 147-157, 2004.