作為次世代記憶體的潛力代表之一，電阻式記憶體具有高切換速度、非揮發性及具有金屬-介電層-金屬簡單結構的優點。在近幾年深度研究中，在主要轉換層內的活性離子如在價電記憶體內的氧缺陷和金屬導電橋樑記憶體內的金屬離子，這些離子在外加電場作用下的移動和分部對於電阻式記憶體的元件表現為主要關鍵，為了對此有著良好的控制，介面工程在獲得可靠性的元件表現具有重要的角色。在本論文中，我們從金屬奈米線類型的電阻式記憶體來揭露介面工程的影響性，接著提出3種主要利用介面工程的策略，包含電極材料的選擇、功能性材料的置入以及在主要轉換層內植入額外的元素，來用以調整和改善電阻式記憶體元件表現。同時，改善方式會轉變為與CMOS製程相容的方式以及元件結構也從二維平面式變成三維垂直結構，其中三維垂直結構被認為可以進一步地提升記憶體元件密度的一個架構。在論文最後，一個氮氧化鋁的垂直式電阻式記憶體系統結合介面工程技術被用來解決在1TxR記憶體陣列中單一元件表現所遇到的議題，同時，垂直性結構以及全原子層製程在架構高元件密度的結構上提供良好的效率並具有相當的量產潛力在未來半導體製程技術中。

Resistive switching random access memory (RRAM) is known as a competitive candidate for the next generation nonvolatile memory because of its advantages such as high switching speed, nonvolatile and simple layer configuration consisting of an insulating layer sandwiched by top and bottom metallic electrodes. After intensive investigating the switching mechanisms in recent years, the migration of the active species such as oxygen vacancies in valence change memory or metal ions in conductive bridge memory under the electrical field is expected to be the main feature. To achieve the good controllability on this, interfacial engineering plays an important role in reliable device performance. In this dissertation, we start from a metallic NW-based RRAM device to reveal the impact of interfacial engineering. Then, 3 kinds of strategies, including electrode material selection, the insertion of functional materials, and the additional elements implanted in the switching materials, are proposed to modify and improve the RRAM cell performance. Also, the methods are translated into CMOS manufacture available process and the device architecture is changed from 2D planar to 3D vertical structure, which can enhance the device density. In the final, an AlOxNy 3D via RRAM system is developed and combines the mentioned interfacial engineering to solve the challenges in the 1TxR RRAM array which has been reported. The vertical cell structure and whole ALD process domination provide higher efficiency on construction of high device density architecture and more potential in the future production by semiconductor manufacturing.

中文摘要...i
Abstract...ii
Table of contents...iii
List of Illustrations...vi
Chapter 1: Introduction...1
1.1. Memory Taxonomy and Mainstream Memory...3
1.2. Emerging Non-Volatile Memory...6
1.3. Motivation of this thesis...15
1.4. Overview of the Dissertation...16
Chapter 2: Resistive Switching Memory by In-Situ Current-Induced Oxidization Process on a Single Crystalline Metallic Nanowire...19
2.1. Preface...19
2.2. Experimental process...20
2.2.1. Chemical synthesis of metallic nanowires [66]...20
2.2.2. Fabrication of metal-Cu NW-metal RRAM devices...20
2.3. Results and discussion...21
2.3.1. Material analyses of synthesized Cu NW...21
2.3.2. Resistive switching properties of metal-Cu NW-metal devices...23
2.3.3. Analyses on the origin of HRS...27
2.3.4. Ambient dependence of current-induced oxidization process...35
2.3.5. Switching mechanism...39
2.4. Summary...43
Chapter 3: Controlling Cation Injection to improve CBRAM by Glancing Angle Deposition Technology...44
3.1. Preface...44
3.2. Experimental process...46
3.2.1. Fabrication of Ag/nano-pillar Al2O3/TiOx/Pt CBRAM devices...46
3.2.2. Model Simulation...47
3.3. Results and discussion...48
3.3.1. Structural characteristics of Al2O3 nano-pillar array...48
3.3.2. Resistive switching properties of nano-pillar-based CBRAM devices...49
3.3.3. Multilevel characteristic of GLAD-based CBRAM devices...54
3.3.4. Reliability and mechanism...57
3.3.5. Impact of topography of Al2O3 nano-pillar array...63
3.3.6. Synaptic properties for learning applications...66
3.3. Summary...68
Chapter 4: Controlling Composition of Oxygen and Nitrogen in Oxynitride Thin Film via Filamentary and Homogeneous Switching...69
4.1. Preface...69
4.2. Experimental process...70
4.3. Results and discussion...71
4.3.1. Resistive switching properties of Pt/ TiOxNy/TiN devices...71
4.3.2. Oxygen composition dependence for switching properties...77
4.3.3. Nitrogen composition dependence for switching properties...79
4.3.4. Switching mechanism...84
4.4. Summary...87
Chapter 5: Defect engineering from binary to analog switching by Al doping profile design in HfOx-based RRAM...89
5.1. Preface...89
5.2. Experimental process...90
5.3. Results and discussion...91
5.3.1. Resistive switching properties of different Al concentration Al:HfOx...91
5.3.2. Resistive switching properties of Al:HfOx in partial doping...94
5.3.3. Resistive switching properties in 3-layered doping profile design...101
5.4. Summary...104
Chapter 6: Development of low-power & high-density 3D VRRAM in AlOxNy Technology...105
6.1. Preface...105
6.2. Experimental process...107
6.3. Results and discussion...108
6.3.1. Development of AlOxNy 3D VRRAM in ALD technology...108
6.3.2. Resistive switching properties of Al:HfOx in partial doping...113
6.4. Summary...118
Chapter 7: Conclusions...119
7.1. Conclusion...119
7.2. Future works...120
Bibliography References...121

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