在本論文中，我們使用快速熱退火(RTA)方法將鍍在Si上的鈦(Ti)薄膜加熱轉換成TiSi2，再以鎳(Ni)薄膜當作催化劑蒸鍍至TiSi2上，進行光電化學反應產氫，我們使用循環安伏法量測光電特性，來觀察各種鈦薄膜經過不同快速熱退火製程後之光電特性，以及使用開路電壓法量測其光電壓。
我們得到25、50Å鈦薄膜經過500℃ RTA轉換成TiSi2後，相比於25、50Å鈦薄膜經過其他溫度快速熱退火的電極，在照光電解下有更大的光電壓、更低的起始電位，以及效率更高的光電化學陽極。

In this paper, we use a rapid thermal annealing (RTA) method to convert titanium (Ti) film coated on Si into TiSi2 ,then deposit nickel (Ni) film as a catalyst on TiSi2 to perform photoelectrochemical water splitting reaction. Cyclic voltammetry method is used to measure the photoelectric water splitting performance of various TiSi2 processing samples .Open circuit voltage was used to measure the photovoltage.
We show that TiSi2 from annealing 25 Å and 50 Å titanium film at 500℃, as compared to 25 Å and 50 Å titanium thin film and other annealing temperature, is a more efficient photoanode that has a larger photovoltage, lower onset potential under illumination .

摘要..........................................I
ABSTRACT......................................II
目錄..........................................III
圖目錄........................................IV
表目錄........................................VIII
第一章 緒論...................................1
1.1概述.......................................1
1.2光電化學產氫原理............................3
1.3歷史發展和文獻..............................5
1.4循環伏特安培原理............................6
第二章 研究方法與實驗步驟.......................8
2.1實驗動機與參考文獻...........................8
2.2實驗樣品與設備.............................. 9
2.3實驗流程....................................10
第三章 實驗結果與分析...........................14
3.1 NI FILM電解水產生的活化現象.................14
3.2 NI FILM 在RTA加熱後的TI做光電解水結果比較....16
3.3光電壓量測..................................29
3.4 TI/NI在RTA加熱後做光電解水結果比較...........35
第四章 結論....................................42
第五章 參考文獻................................43

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