此論文中，研究對於元件尺寸微縮有潛力的低維度半導體材料-二維二硫化鉬與一維奈米碳管，包含合成方法、優異的電學與光學特性及未來奈米電子元件之前瞻應用。利用化學氣相沉積法完成大面積均勻並高結晶品質之二硫化鉬單分子層製備，並展示藉由缺陷控制、相轉變、異質結構及結構形貌的調變達到能帶結構、電流傳導特性、光學特性及磁特性的可調性，提供多功能性元件應用與新穎物理研究；另外，展示大面積規則排列奈米碳管薄膜組裝方法，並能有效控制薄膜厚度，擁有高度異向性之光-物質交互作用包含相干性電漿子共振、電漿子-聲子耦合以及增強型吸收且涵蓋遠紅外光/太赫茲頻率至近紅外光(波長約1.4微米)寬頻段之可調性，展現奈米碳管電漿子在紅外光感測器有很大潛力；此外，高良率之n型與p型場效電晶體及互補式金屬氧化物半導體元件能藉由金屬電極的選擇與通道的摻雜達成，展示其在電子元件應用的潛力。此論文中這些優異特性展望了此兩低維度半導體材料在下世代電子元件應用的潛力與重要性。

In this dissertation, two potential low-dimensional semiconducting materials, two-dimensional molybdenum disulfide (MoS¬2) and one-dimensional carbon nanotube (CNT), with several benefits for device miniaturization were investigated including reliable synthesis, remarkable electrical properties, fascinating optical physics and prospective applications for future nano-electronic devices. Large-area MoS2 monolayers with uniformity and high crystalline quality achieved by chemical vapor deposition were demonstrated for future industry demand. The tunability on band structures, electrical transports, optical properties or magnetic properties with defect control, phase engineering, heterostructures or geometry modulation provides diverse functionalities for device applications and novel physics exploration. Robust methods for large-area universally-aligned CNT films with controllable thickness were also demonstrated. The fascinating light-matter interactions related to the highly anisotropism such as coherent plasmon resonance, plasmon-phonon coupling as well as enhanced and broadly tunable absorption spanning wavelengths from the terahertz/far-infrared to the near-infrared (down to telecom wavelength 1.4 μm) were presented, making CNT plasmonics a promising foundation for photodetection applications through the entire infrared range. Besides, both reliable p-type field-effect transistors (FETs) and n-type FETs as well as complementary metal-oxide-semiconductor (CMOS) inverters were also fabricated with the proper engineer of contact metal and channel doping for a demonstration of the potential for electronics applications. These prominent performances presented in this dissertation envision the potential and significance of these two low-dimensional semiconducting materials for next-generation electronics.

ABSTRACT I
CHAPTER 1 INTRODUCTION 1
CHAPTER 2 SYNTHESIS AND APPLICATIONS OF TWO-DIMENSIONAL MONOLAYER SEMICONDUCTORS 5
2.1 Growth of Monolayer semiconductors by Chemical Vapor Deposition 6
2.2 Manipulation of Electrical and Magnetic properties by Defect Control 35
2.3 Enabling monolithic 3D image sensor using large-area monolayer transition metal dichalcogenide and logic/memory hybrid 3DIC 50
CHAPTER 3 SYNTHESIS AND APPLICATIONS OF ONE-DIMENSIONAL CARBON NANOTUBES 57
3.1 Preparation of Universally-aligned Carbon Nanotubes 57
3.2 Coherent Plasmon and Phonon-Plasmon Resonances in Carbon Nanotubes 61
3.3 Strong and Broadly Tunable Plasmon Resonances in Thick Films of Aligned Carbon Nanotubes 77
3.4 Contact Engineering and Channel Doping for Robust Carbon Nanotube NFETs 92
CHAPTER 4 INTEGRATION AND APPLICATION OF HETEROGENEOUS MATERIALS 104
4.1 2D-2D In-plane Artificial Lattices of Monolayers Heterojunctions 105
4.2 Electron Field Emission of Geometrically-Modulated 2D Monolayers on 1D ZnO arrays 129
4.3 Integration of 2D-MoS2 and 1D-CNT 161
CHAPTER 5 CONCLUSION 163
REFERENCE 165

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